X-On Electronics has gained recognition as a prominent supplier of METR3906-G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. METR3906-G Bipolar Transistors - BJT are a product manufactured by MQTSUKI. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

METR3906-G MQTSUKI

Name: METR3906-G
Brand: MQTSUKI
SKU: METR3906G_MQTSUKI
Availability: InStock
Rating: 5 (11 reviews)

METR3906-G electronic component of MQTSUKI

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See Product Specifications

Part No.	METR3906-G
Manufacturer:	MQTSUKI
Category:	Bipolar Transistors - BJT
Description:	Transistors (NPN/PNP) PNP 200mA 40V SOT-23 (SOT-23-3) RoHS
Datasheet:	METR3906-G Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

50: USD 0.0185 ea
Line Total: USD 0.92

Availability - 2910
Ship by Fri. 06 Dec to Wed. 11 Dec

MOQ: 50 Multiples: 50
Pack Size: 50

METR3906-G More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

2910

Ship by Fri. 06 Dec to Wed. 11 Dec

MOQ : 50
Multiples : 50

50 : USD 0.0185
500 : USD 0.015
3000 : USD 0.013
6000 : USD 0.0117
24000 : USD 0.0108
51000 : USD 0.0101

Specifications

Manufacturer
MQTSUKI MQTSUKI

Product Category
Bipolar Transistors - BJT Bipolar Transistors - BJT

Category
Bipolar Transistors-BJT Bipolar Transistors-BJT

Rohs
y y

Package
SOT - 23 (SOT - 23 - 3) SOT - 23 (SOT - 23 - 3)

Brand Category
MQTSUKI MQTSUKI

Transistor Type
pnp pnp

Current - Collector Ic Max
200 mA 200 mA

Voltage - Collector Emitter Breakdown Max
40 V 40 V

Power - Max
225 mW 225 mW

Collector Cut-Off Current Icbo
- -

Collector-Emitter Breakdown Voltage Vceo
40 V 40 V

Power Dissipation Pd
225 mW 225 mW

Collector Current Ic
200 mA 200 mA

Dc Current Gain Hfe@Ic Vce
100@10 mA , 1V 100@10 mA , 1V

Transition Frequency Ft
250MHz 250MHz

Collector-Emitter Saturation Voltage Vcesat@Ic Ib
400 mV @50 mA , 5 mA 400 mV @50 mA , 5 mA

Operating Temperature
- 55 C ~ + 150 C @ (Tj) - 55 C ~ + 150 C @ (Tj)

Notes:- Show Stocked Products With Similar Attributes.

METR3906-G Alternative Parts

We are delighted to provide the METR3906-G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the METR3906-G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

The METR3906-G is a PNP transistor manufactured by MQTSUKI with SOT-23-3 (a three-lead small outline transistor) RoHS compatible packaging. This transistor has a maximum current rating of 200mA and a maximum voltage rating of 40V, making it suitable for use in many electronic circuits. Additionally, the SOT-23-3 package is small enough to fit into tight spaces, allowing for efficient circuit board layouts.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
2910 Ship by Fri. 06 Dec to Wed. 11 Dec MOQ : 50 Multiples : 50	50 : USD 0.0185 500 : USD 0.015 3000 : USD 0.013 6000 : USD 0.0117 24000 : USD 0.0108 51000 : USD 0.0101

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