XTSC429.xxx - 1812 Extreme Temperature Silicon Capacitor Rev 3.1 Key features Key applications n 250C requirements, High temperature n Ultra High temperature up to 250C: applications, such as military, aerospace, w Temperature Coeff : <1.5% (-55 C to +250 C) automotive and down-hole industries. w Voltage <0.1 %/V n High reliability applications w Negligible capacitance loss through aging n Replacement of X8R and COG dielectrics n Unique high capacitance in EIA/1812 package n Decoupling / Filtering / Charge pump size, up to 3.3 F (i.e.: pressure sensor, motor management) n High reliability (FIT <0.017 parts / billion hours) n Downsizing n Low leakage current technology down to 3nA n Low ESL and Low ESR n Suitable for lead free reflow-soldering *Please refer to our assembly Application Note for further recommendations Thanks to the unique IPDiA Silicon capacitor The IPDiA technology features a capacitor technology, most of the problems encountered in integration capability (up to 250nF/mm ) which demanding applications can be solved. allows a capacitance value similar to X8R EXtreme Temperature Silicon Capacitors are dielectric, but with better electrical performances appropriate for applications used in extreme than COG/NPO dielectrics. operating temperature range (up to 250C). This technology also offers high reliability, up to XTSC industry leading performances allows to 10 times better than alternative capacitor propose a 3.3F in 1812 with a TC<1,5% over the technologies, such as Tantalum or MLCC, and full -55C/+250C temperature range. eliminates cracking phenomena. This technology also offers a negligible ageing This Silicon based technology is RoHS compliant and a stable insulation resistance, even at very and compatible with lead free reflow soldering high temperature, as well as a stable capacitor process. value over the full operating. XTSC429.xxx Electrical specification Capacitance value Parameters Value (**) Capacitance range 1F to 3.3F 10 22 27 33 47 68 (**) Capacitance tolerances 15 % 1 nF -55 C to 250 C Operating temperature range Contact Contact Contact Contact Storage temperatures - 70 C to 265 C 10 nF IPDIA Sales IPDIA Sales IPDIA Sales IPDIA Sales Temperature coefficient <1.5 %, from -55 C to +250 C 1F 2.2F 2.7F 3.3F (**) 0,1 F 935.xxx.xxx.xxx 935.xxx.xxx.xxx 935.xxx.xxx.xxx 935.133.429.733 Breakdown voltage (BV) 11 VDC Capacitance variation versus 0.1 % /V (from 0 V to RVDC) 1 F RVDC Equivalent Serial Inductor (ESL) Max 1nH (*) Thinner thickness (as low as 100 m thick) available, see Low Profile Silicon Capacitor product: LPSC (**) Equivalent Serial Resistor (ESR) Max 800mW 1GW min 3V,25C (**) Other values on request. Insulation resistance 100MW min 3V,250C Negligible, < 0.001 % / 1000 h Ageing Reliability FIT<0.017 parts / billion hours, (*) Capacitor height Max 400 m DC Voltage stability ESL (nH) 25C MLCC capacitors vs. PICS 0402 C0G(NPO) vs. PICS 10 1,1 PICS 0 1 C0G -10 0,9 C0G 0,8 -20 -30 0,7 X7R 0,6 -40 0,5 -50 0,4 -60 0,3 -70 0,2 -80 Y5V PICS 0,1 -90 0 -100 0 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 0 1 2 3 4 5 6 7 Capacitance (pF) Bias voltage (V) Fig.1 Capacit ance change versus temperature Fig.2 Capacitance change versus voltage Fig.3 ESL versus capacitance value variation compared with alternative dielectrics variation compared with alternative dielectrics compared with alternative dielectrics Part Number Value (E6) 935.133. B.2 S. U xx 10 Breakdown 22 Voltage 27 Size Unit 4 = 11V 33 9 = 1812 i.e.: 3.3 F/1812 case (XTSC type) 5 = 1 n 0 = 10 f 47 6 = 10 n 1 = 0.1 p 68 935.133.429.733 7 = 0.1 2 = 1 p 3 = 10 p 8 = 1 9 = 10 4 = 0.1 n Termination and Outline Termination Package outline L Lead-free nickel/solder coating compatible with automatic soldering Typ. 1812 W technologies: reflow and manual L 4.66 0.05 Comp. size Solder Land IPD Resist W 3.56 0.05 component pattern Typical dimensions, all dimensions in mm X 0.9 IPD Land patterns size Y 3.4 Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information For more information, please visit: