X-On Electronics has gained recognition as a prominent supplier of 935142521310 Silicon RF Capacitors / Thin Film across the USA, India, Europe, Australia, and various other global locations. 935142521310 Silicon RF Capacitors / Thin Film are a product manufactured by Murata. We provide cost-effective solutions for Silicon RF Capacitors / Thin Film, ensuring timely deliveries around the world.

935142521310 Murata

935142521310 electronic component of Murata
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Part No.935142521310
Manufacturer: Murata
Category: Silicon RF Capacitors / Thin Film
Description: Silicon RF Capacitors Thin Film 0202 150V 100pF 15% Vert Wire LoPro Si
Datasheet: 935142521310 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 5.841 ea
Line Total: USD 5.84 
Availability - 882
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
882
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 5.841
10 : USD 5.203
25 : USD 4.939
50 : USD 4.763
100 : USD 4.246
250 : USD 4.048
500 : USD 3.861
1000 : USD 3.817
2000 : USD 3.74

   
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We are delighted to provide the 935142521310 from our Silicon RF Capacitors / Thin Film category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 935142521310 and other electronic components in the Silicon RF Capacitors / Thin Film category and beyond.

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WBSC / WTSC / WXSC Wire-bondable vertical Si Capacitors up to 250C Rev 2.2 Key features Key applications Low profile 250 m. Any demanding applications such as radar, lidar, aerospace, wireless infrastructure communication, data Low leakage current. broadcasting, automotive (e.g: Lidar) High stability (temperature and voltage). Applicable for standard wire bonding approach (ball and wedge), thanks to a perfect pad flatness. Negligible capacitance loss through aging. Decoupling / DC noise and harmonic filtering / Matching Compatible with standard wire bonding assembly networks (e.g: GaN power amplifier, LDMOS). (ball and wedge). High reliability applications. (please refer to our Assembly Application Note for more details) Downsizing. Low profile applications (250 m). The WBSC / WTSC / WXSC Capacitors are dedicated to applications where reliability up to 250C (for WXSC) is the main parameter. They are suitable for DC decoupling. The unique technology of integrated passive devices in silicon developed by Murata Integrated Passive Solutions can solve most of the problems encountered in demanding applications. These Si capacitors in ultradeep trenches have been developed with a semiconductor process which enables the integration of high capacitance density from 1.55 nF/mm to 250 nF/mm (with a breakdown voltage of respectively 450 V to 11 V). Our SiCap technology features high reliability - up to 10 times better than alternative capacitors technologies - thanks to a full control of the production process with high temperature curing (above 900C) generating a highly pure oxide. This technology provides industry leading performances relative to the capacitor stability up to 250C for WXSC, up to 200C for WTSC and up to 150C for WBSC with a temperature coefficient equals to +60 ppm/K . In addition, intrinsic properties of the silicon show a low dielectric absorption and a low to zero piezo electric eeff ct resulting in no memory effect . This Silicon based technology is ROHS compliant. Ref: CLWBSC2.2 1Murata Silicon Capacitors - WBSC/WTSC/WXSC Series Rev 2.2 Electrical specifications Wire-bondable vertical Si Capacitors Parameter Value WBSC.xxx from -55C to 150C Capacitance range 100 pF to 22 nF(*) Part number Capacitance BV Case size Thickness Capacitance tolerances 15 % (*) 935142521310-xxT 100 pF 150 V 0202 250 m Operating temperature range -55 C to 250C for WXSC 935142521410-xxT 1 nF 150 V 0202 250 m Storage temperature range -70C to 265C(**) for WXSC 935142831510-xxT 10 nF 30 V 0202 250 m Temperature coefficient +60 ppm/K 935142630510-xxT 10 nF 50 V 0303 250 m Breakdown Voltage (BV) 11 V, 30 V, 50 V, 100 V, 150 V, 450 V(*) 935142634522-xxT 22 nF 50 V 0504 250 m Capacitance variation versus RVDC 0.02 %/V (from 0 to RVDC) High temperature Wire-bondable vertical Si Capacitors WTSC.xxx from -55C to 200C Equivalent Series Inductance (ESL) Typ. 50 pH SRF (***) 935144521310-xxA 100 pF 150 V 0202 250 m Equivalent Series Resistance (ESR) Typ. 50 m (***) 935144521410-xxA 1 nF 150 V 0202 250 m Insulation resistance 10 G RVDC 25C t>120s for 10 nF Extreme temperature Wire-bondable vertical Si Capacitors WXSC.xxx Ageing Negligible, < 0.001 % / 1000 h from -55C to 250C Reliability FIT<0.017 parts / billions hours 935145521310-xxA 100 pF 150 V 0202 250 m 935145521410-xxA Capacitor thickness 250 m 1 nF 150 V 0202 250 m (*) Other values on request (**) w/o packing (***) with wire-bonding de-embedded Fig. 1: Capacitance variation vs temperature Fig.2: Capacitance variation vs DC biasing voltage Fig.3: Various WXSC measurement results (for WXSC and MLCC technologies) BV30 (for WXSC and MLCC technologies) (Impedances in shunt mode) with capacitance value from 100pF to 22nF Capacitance range Available parts. 0504 For other values, contact your Murata sales representative. 0402 0202 - 10nF - BV30 available as WBSC only. 0303 BV 50V BV 11V BV 450V 0302 BV 150V BV 30V BV 100V 0202 10pF 100pF 470pF 1nF 10nF 100nF Capacitance Termination Package Outline Pad dimension mm Case size mm (typ 0.02 mm) Can be directly mounted on the PCB using die bonding and wire bonding(s). Bottom electrode is a b L W T in Ti/Ni/Au and top electrode in Gold (TiWAu) for 0202 >0.40 >0.40 0.50 0.50 WBSC and in Aluminum for WTSC/WXSC. Other top finishings available on request. Compatible 0302 >0.7 >0.4 0.8 0.5 with standard wire bonding assembly (ball and 0303 >0.70 >0.70 0.80 0.80 0.25 wedge). 0402 >0.9 >0.4 1.00 0.50 0504 >1.15 >0.9 1.25 1.00 Ref: CLWBSC2.2 2 2.2nF 2.7nF 4.7nF 22nF 33nF 82nF 220nF

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8532.25.00 45 no--Dielectric of paper or plastics Free

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