UWSC - 26 GHz+ Ultra large-band Wire bondable vertical Silicon Capacitors Rev 1.3 Key features Key applications Optoelectronics/high-speed data Ultra large band performance higher than 26 GHz Trans-Impedance Amplifiers (TIA) Resonance free and phase stability Receive-and-Transmit Optical Sub-Assembly (ROSA/ TOSA) Unique capacitance value of 1 nF in 0101 Synchronous Optical Networking (SONET) High stability of capacitance value over temperature, voltage and aging High speed digital logic Broadband test equipment Ultra low ESR and ESL and high reliability Broadband microwave/millimeter wave Compatible with standard wire bonding assembly (ball and wedge) Replacement of X7R and NP0 capacitors Low profile applications (250 m, 100 m on request) (please refer to our Assembly Application Note for more details) UWSC Capacitors target optical communication systems (ROSA/TOSA,SONET and all optoelectronics) as well as high speed data systems or products. The UWSC are designed for DC decoupling and bypass applications. The unique technology of integrated passive devices in silicon developed by Murata Integrated Passive Solutions, offers high rejection at frequencies higher than 26 GHz. The UWSC capacitors are manufactured with both deep trench and MOS semiconductor processes to cover low and high capacitance requirements. The UWSC Capacitors provide very high reliability and capacitance stability over temperature (+60ppm/K) and voltage. They have and extended operating temperature range from -55 to 150C. Reliable and repeatable performances are obtained thanks to a fully controlled production line with high temperature curing (above 900C) generating a highly pure oxide. These capacitors are compatible with standard wire bonding assembly (ball and wedge). They are RoHS-compliant and are available with thick gold terminations. Ref: CLUWSC1.3 1Murata Silicon Capacitors - UWSC Series Rev 1.3 Electrical specifications Parameter Value Part number Product description Case size Thickness Capacitance range 47 pF to 22 nF(*) Ultra large-band Wire bondable vertical Si UWSC.xxx Capacitor from -55 to 150C, 26 GHz+ with Gold Capacitance tolerance 15 %(*) termination Operating temperature range -55 C to 150 C 935154528247-xxT Low profile UWSC, 47 pF BV150 0201 100 m Storage temperature - 70 C to 165 C(**) 935154522310-xxT Low profile UWSC, 100 pF BV150 0101 100 m Temperature coefficient +60 ppm/K 935154521310-xxT Low profile UWSC, 100 pF BV150 0202 100 m Breakdown voltage (BV) 11 V, 30 V, 50 V, 100 V, 150 V, 450 V(*) 935153521310-xxT UWSC, 100 pF BV150 0202 250 m 935154529315-xxT Low profile UWSC, 150 pF BV150 015015 100 m Capacitance variation versus RVDC 0.02 %/V (from 0 V to RVDC) 935154832410-xxT Low profile UWSC, 1 nF BV30 0101 100 m Equivalent Series Inductance (ESL) Typ 6 pH (****) SRF 935154632410-xxT Low profile UWSC, 1 nF BV50 0101+ 100m Equivalent Series Resistance (ESR) Typ 14 m(****) 935154521410-xxT 100G RVDC 25C, Low profile UWSC, 1 nF BV150 0202 100 m Insulation resistance t>120s for 100nF 935153521410-xxT UWSC, 1 nF BV150 0202 250 m Ageing Negligible, < 0.001% / 1000h 935154831510-xxT Low profile UWSC, 10 nF BV30 0202 100 m Reliability FIT<0.017 parts / billions hours 935154630510-xxT Low profile UWSC, 10nF BV 50 0303 100 m Capacitor height 250 m or 100 m (*) 935153831510-xxT UWSC, 10 nF BV30 0202 250 m (*) Other values on request (**) w/o packing (****) e.g. 10 nF/0303/BV 50V 935153630510-xxT Low profile UWSC, 10 nF BV 50 0303 250 m 935154634522-xxT Low profile UWSC, 22nF BV 50 0504 100 m Fig. 1: Capacitance variation vs temperature Fig.3: 10 nF / 0303 UWSC BV50 measurement Fig.2: Capacitance variation vs DC biasing voltage BV30 (for UWSC and MLCC technologies) results (S-parameters in shunt mode) (for UWSC and MLCC technologies) Capacitance range 0504 0402 Available parts. For other values, contact your Murata sales representative. 0303 Under development. 0302 0101+ available as 1 nF-BV50 only. BV 11V BV 50V 0202 BV 30V BV 150V 0201 BV 100V BV 450V 015015 0101 / 0101+ Capacitance 100nF 1nF 10nF 10pF 100pF Termination Can be directly mounted on the PCB using die bonding and wire bonding(s). Bottom electrode is in Ti/Ni/Au and top electrode in Gold (TiWAu). Other top finishings available on request (ex: Aluminum). Compatible with standard wire bonding assembly (ball and wedge). Ref: CLUWSC1.3 2 47pF 150pF 330pF 470pF 1.5nF 2.2nF 2.7nF 4.7nF 5.6nF 6.8nF 15nF 22nF 33nF 82nF 220nF