X-On Electronics has gained recognition as a prominent supplier of NCE40P20Q MOSFET across the USA, India, Europe, Australia, and various other global locations. NCE40P20Q MOSFET are a product manufactured by NCE Power. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

NCE40P20Q NCE Power

NCE40P20Q electronic component of NCE Power
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See Product Specifications
Part No.NCE40P20Q
Manufacturer: NCE Power
Category: MOSFET
Description: DFN-8L(3.3x3.3) MOSFETs ROHS
Datasheet: NCE40P20Q Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.5176 ea
Line Total: USD 2.59

Availability - 4784
Ship by Tue. 13 Aug to Fri. 16 Aug
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
4459
Ship by Tue. 13 Aug to Fri. 16 Aug
MOQ : 5
Multiples : 5
5 : USD 0.5163
50 : USD 0.4345
150 : USD 0.4
500 : USD 0.3565
2500 : USD 0.3364
5000 : USD 0.3254

   
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Product Category
Package
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We are delighted to provide the NCE40P20Q from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NCE40P20Q and other electronic components in the MOSFET category and beyond.

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The NCE40P20Q is a type of DFN-8L (3.3x3.3) surface mount MOSFET manufactured by NCE Power, that conforms to ROHS (Restriction of Hazardous Substances) standards and regulations. It is a high-power integrated FET (Field Effect Transistor) with excellent power density and high efficiency at lower drain-source voltage range. It is suitable for applications requiring switching and loads of high currents with low on-resistance and reduced gate charge. Its maximum drain-source voltage is 40V, maximum continuous drain current is 20A, and maximum gate-source voltage is ± 20V. It features low on-resistance, low gate charge, higher current density, lower temperature rise and improved reliability. It is suitable for applications such as DC-DC converters, switch-mode power supplies, motor controls and battery charging systems.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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