Product Information

NCE60P04Y

NCE60P04Y electronic component of NCE Power

Datasheet
MOSFET P Trench 60V 4A (Tc) 3V @ 250uA 120 mΩ @ 4A,10V SOT-23-3L RoHS
Manufacturer: NCE Power
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.1535 ea
Line Total: USD 0.77

16174 - Global Stock
Ships to you between
Fri. 24 May to Wed. 29 May
MOQ: 5  Multiples: 5
Pack Size: 5

 More Buying Options & Price Grid(s)

Availability Price Quantity
11353 - WHS 1


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 5
Multiples : 5

Stock Image

NCE60P04Y
NCE Power

5 : USD 0.1485
50 : USD 0.1218
150 : USD 0.1085
500 : USD 0.0984
3000 : USD 0.0905
6000 : USD 0.0864

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

:The NCE60P04Y is a MOSFET P Trench device manufactured by NCE Power. It is designed for use in applications requiring high-current switching and low on-resistance. It has an operating voltage of 60V, a peak current of 4A (Tc) 3V @ 250uA and a drain-source resistance of 120 mΩ @ 4A, 10V. It is a SOT-23-3L RoHS regulated device and is used in a variety of industrial, commercial and automotive applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NCE Power may also be referenced as

Wuxi NCE Power Semiconductor

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