Product Information

BAS116.215

BAS116.215 electronic component of Nexperia

Datasheet
Diode: switching; SMD; 85V; 215mA; 0.8us; Package: Reel, tape; SOT23

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 0.1221 ea
Line Total: USD 1.22

0 - Global Stock
MOQ: 10  Multiples: 5
Pack Size: 5
Availability Price Quantity
857 - WHS 1


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 10
Multiples : 5

Stock Image

BAS116.215
Nexperia

10 : USD 0.1092
50 : USD 0.0689
250 : USD 0.0546
330 : USD 0.0494
900 : USD 0.0468

     
Manufacturer
Product Category
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Mounting Style
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Peak Reverse Voltage
Max Surge Current
If - Forward Current
Recovery Time
Vf - Forward Voltage
Packaging
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BAS116.215 is a dual N-channel logic level enhancement mode field-effect transistor (FET) manufactured by Nexperia. This FET has a maximum continuous drain current rating of 115 amperes and a maximum drain-source voltage rating of 100 volts. It is also encapsulated in a TO-264 package and is designed for applications such as motor control and other high power switching.

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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