BSP230 Nexperia

DISCRETE SEMICONDUCTORS DATA SHEET BSP230 P-channel enhancement mode vertical D-MOS transistor 1997 Oct 21 Product specication Supersedes data of 1997 Jun 17 File under Discrete Semiconductors, SC13bPhilips Semiconductors Product specication P-channel enhancement mode BSP230 vertical D-MOS transistor FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown. handbook, halfpage 4 d APPLICATIONS Line current interruptor in telephone sets g Relay, high speed and line transformer drivers. 12 3 s Top view MAM121 DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a SOT223 plastic SMD package. Fig.1 Simplified outline and symbol. PINNING - SOT223 PIN SYMBOL DESCRIPTION 1 g gate CAUTION 2 d drain The device is supplied in an antistatic package. 3 s source The gate-source input must be protected against static discharge during transport or handling. 4 d drain QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V drain-source voltage (DC) -- 300 V DS V gate-source voltage (DC) open drain - 20 V GSO V gate-source threshold voltage I = - 1 mA V =V - 1.95 - 2.8 V GSth D DS GS I drain current (DC) -- 210 mA D R drain-source on-state resistance I = - 170 mA V = - 10 V - 17 DSon D GS P total power dissipation T 25 C - 1.5 W tot amb 1997 Oct 21 2