Rev. 1.21 BSP297 SIPMOS Small-Signal-Transistor Product Summary Feature V 200 V DS N-Channel R 1.8 DS(on) Enhancement mode I 0.66 A D Logic Level PG-SOT-223 dv/dt rated Pb-free lead plating RoHS compliant 4 3 2 1 VPS05163 Type Package Tape and Reel Information Marking P-SOT-223 BSP297 E6327: 1000 pcs/reel BSP297 PG-SOT-223 BSP297 L6327: 1000 pcs/reel BSP297 Maximum Ratings, at T = 25 C, unless otherwise specified j Parameter Symbol Value Unit A Continuous drain current I D T =25C 0.66 A T =70C 0.53 A 2.64 Pulsed drain current I D puls T =25C A 6 kV/s Reverse diode dv/dt dv/dt I =0.66A, V =160V, di/dt=200A/s, T =150C S DS jmax V Gate source voltage V 20 GS ESD Sensitivity (HBM) as per MIL-STD 883 Class 1 1.8 W Power dissipation P tot T =25C A C Operating and storage temperature T , T -55... +150 j stg IEC climatic category DIN IEC 68-1 55/150/56 Page 1 2006-09-28Rev. 1.21 BSP297 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics - 15 25 K/W Thermal resistance, junction - soldering point R thJS (Pin 4) SMD version, device on PCB: R thJA min. footprint - 80 115 2 1) 6 cm cooling area - 48 70 Electrical Characteristics, at T = 25 C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics 200 - - V Drain-source breakdown voltage V (BR)DSS V =0, I =250A GS D 0.8 1.4 1.8 Gate threshold voltage, V = V V GS DS GS(th) I =400A D A Zero gate voltage drain current I DSS V =200V, V =0, T =25C - - 0.1 DS GS j V =200V, V =0, T =150C - 10 100 DS GS j - 1 10 nA Gate-source leakage current I GSS V =20V, V =0 GS DS - 1.2 3 Drain-source on-state resistance R DS(on) V =4.5V, I =0.53A GS D - 1 1.8 Drain-source on-state resistance R DS(on) V =10V, I =0.66A GS D 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2006-09-28