BSS84AKM Nexperia

BSS84AKM 50 V, 230 mA P-channel Trench MOSFET Rev. 1 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible ESD protection up to 1 kV Very fast switching AEC-Q101 qualified Trench MOSFET technology 1.3 Applications Relay driver High-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T=25C ---50 V DS j V gate-source voltage -20 - 20 V GS 1 I drain current V =-10 V T =25C ---230mA D GS amb Static characteristics R drain-source on-state V =-10 V I =-100mA -4.5 7.5 DSon GS D resistance T =25C j 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . SOT883BSS84AKM NXP Semiconductors 50 V, 230 mA P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D 1 2S source 3 2 3 D drain Transparent G top view SOT883 (SOT883) S sym146 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BSS84AKM SOT883 leadless ultra small plastic package 3 solder lands SOT883 body 1.0 x 0.6 x 0.5 mm 4. Marking Table 4. Marking codes 1 Type number Marking code BSS84AKM ZA 1 % = placeholder for manufacturing site code BSS84AKM All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 23 May 2011 2 of 16