IP4303CX4 (/P) Dual back-to-back diode array with ESD protection to IEC61000-4-2, level4 15 May 2009 Product data sheet 1. Product profile 1.1 General description IP4303CX4 (/P) is a diode array, which is designed to provide protection to downstream components from Electrostatic Discharge (ESD) voltages as high as 15 kV contact, far exceeding the IEC61000-4-2, level4. IP4303CX4 (/P) is fabricated by using monolithic silicon semiconductor technology and integrates four pseudo back-to-back diodes in a single Wafer-Level chip-scale package. These features make IP4303CX4 (/P) ideal for use in applications requiring component miniaturization, such as mobile phone handsets, cordless telephones and personal digital devices. For mechanically demanding applications the option /P as IP4303CX4/P is offering improved mechanical stability by using advanced solder balls. 1.2 Features Pb-free, RoHS compliant and free of Halogen and Antimony (dark green compliant) 2 back-to-back diodes with common ground Back to back diodes to provide downstream ESD protection up to 15 kV (contact) Wafer-Level chip-scale package with 0.4 mm pitch only 1.3 Applications General purpose ESD-protection in mobile appliances such as but not limited to: Cellular and PCS mobile handsets Wireless data (WAN/LAN) systems 2. Pinning Information 1 2 A1 A2 A B B1 B2 bra995 Fig 1. Transparent package top view, Fig 2. IP4303CX4 (/P) schematic diagram balls facing down IP4303CX4 (/P) NXP Semiconductors Dual back-to-back diode array with ESD protection 3. Limiting values Table 1. Limiting values Symbol Parameter Conditions Min Max Unit V Supply Voltage Range -12.0 +12.0 V CC ESD Electrostatic Discharge, IEC 61000-4-2, Level 4, 1 1 all pins Contact Discharge -8(-15) +8(+15) kV Air Discharge -15 +15 kV T storage temperature range -55 +150 stg C T Peak solder reflow 10 seconds max. +260 pk C temperature T Ambient operating -30 +85 C amb temperature 4. Electrical Characteristics Table 2. Electrical characteristics T = 25 C unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit V Diode breakdown voltage, I = 1 mA 14 16.5 - V (BR+) test positive voltages V Diode breakdown voltage, I = 1 mA - -16.5 -14 V (BR-) test negative voltages I Diode reverse leakage V = +5 V - - 100 nA lkg+ current, per diode pair I Diode reverse leakage V = -5 V - - 100 nA lkg- current, per diode pair C Diode capacitance value V = 0 V f = 1 MHz - - 15 pF d Pin A to ground (Pin B) 1 Device is tested with 1000 pulses of 15kV contact discharges each, according the IEC61000-4-2 model and far exceeds the specified level 4 (8kV contact discharge) NXP B.V. 2006. All rights reserved. Product data sheet 15 May 2009 2 of 7