IP4305CX4/LF (/P) Integrated dual Schottky diode array with ESD protection to IEC61000-4-2, level 4 20 August 2009 Product data sheet 1. Product profile 1.1 General description IP4305CX4/LF (/P) is a dual Schottky diode one back-2-back diode array in a 2 x 2 pin CSP with 0.4 mm pitch. In addition to two Schottky diodes with a common Cathode connection, a integrated bi-directional diode supports the realisation of a high level ESD- protection. IP4305CX4/LF (/P) is fabricated using monolithic silicon technology and integrates Schottky and standard silicon Zener diodes in a single Wafer-Level chip-scale package.These features make the IP4305CX4/LF (/P) ideal for use in applications requiring component miniaturization, such as mobile phone handsets. For mechanically demanding applications the option /P as IP4305CX4/LF/P is offering improved mechanical stability by using advanced solder joints. 1.2 Features Pb-free, RoHS compliant and free of Halogen and Antimony (dark green compliant) 2 Schottky diodes with common Cathode One back-to-back diode Back to back diodes to provide downstream ESD protection up to 15 kV (contact) Wafer-Level chip-scale package with 0.4 mm pitch only 1.3 Applications General purpose ESD-protection and voltage detection in mobile appliances such as: Cellular and PCS mobile handsets Wireless data (WAN/LAN) systems 2. Pinning Information A1 A1 B1 A2 B2 B2 A2 B1 Fig 1. Transparent package view, Fig 2. IP4305CX4/LF (/P) schematic diagram balls facing down IP4305CX4/LF (/P) NXP Semiconductors Integrated dual Schottky diode array with ESD protection 3. Limiting values Table 1. Limiting values Symbol Parameter Conditions Min Max Unit V DC input voltage range for A1 to A2, B2 0 +5.5 V I/O V DC input voltage range for A1 to B1 -5.5 +5.5 V I/O ESD Electrostatic Discharge Pins A1 to B1 (B2, A2 connected to an 2kV IEC 61000-4-2, Level 4 compliant IC I/O) 1 1 Contact -8 (-15) +8 (+15) kV Air Discharge -15 +15 kV (2) Pins to B2, A2 to A1 or B1 IEC 61000-4-2, Level 1 or A1 to A2 or B2 with B1 unconnected Contact & Air Discharge -2 +2 kV P Maximum continuous power dissipation 5 mW D-ch 70C per channel T storage temperature range -55 +150 stg C T Peak solder reflow temperature 10 seconds max. +260 pk C T Ambient operating temperature -30 +85 amb C 4. Electrical Characteristics Table 2. Characteristics T = 25 C unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit C Schottky diode junction capacitance V = 0 V f = 1 MHz - 19 - pF jo-Schottky C Back-to-back diode junction capacitance V = 0 V f = 1 MHz - 7 - pF jo-Si V Back-to-back diode breakdown voltage I= +1 mA 5.5 - 10 V BR-Si test I = -1 mA -10 - -5.5 V test V Schottky diode breakdown voltage I = +1 mA 15 - - V BR-Schottky test V Schottky diode forward voltage I = +10 A - - 0.25 V Schottky test I = +100 A - - 0.35 V test I = +10 mA - - 0.45 V test I Back-to-back diode leakage current V = +3 V - - +50 nA lkg-Si V = -3 V -50 - - nA I Schottky diode leakage current V = +5 V, T = +25C - - 1 A lkg-Schottky amb V = +5 V, T = +50C - - 8 A amb V = +5 V, T = +85C - - 80 A amb 1 Device is tested with 1000 pulses of 15kV contact discharges each, according the IEC61000-4-2 model 2 The two Schottky diodes are neither build for ESD protection nor to survive ESD discharges when connected directly to GND. NXP B.V. 2006. All rights reserved. Product data sheet 20 August 2009 2 of 7