PBHV2160Z Nexperia

PBHV2160Z 600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor 24 June 2015 Product data sheet 1. General description NPN high-voltage low V Breakthrough In Small Signal (BISS) transistor in a SOT223 CEsat (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV3160Z 2. Features and benefits Low collector-emitter saturation voltage V CEsat High collector current capability High collector current gain h at high I FE C 3. Applications Electronic ballast for fluorecent lighting LED driver for LED chain module LCD backlighting HID front lighting Hook switch for wired telecom Switch Mode Power Supply (SMPS) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - 600 V CEO voltage I collector current - - 0.1 A C Scan or click this QR code to view the latest information for this product SOT223NXP Semiconductors PBHV2160Z 600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base 4 2, 4 2 C collector 1 3 E emitter 1 2 3 3 4 C collector SC-73 (SOT223) sym016 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PBHV2160Z SC-73 plastic surface-mounted package with increased heatsink 4 SOT223 leads 7. Marking Table 4. Marking codes Type number Marking code PBHV2160Z HV216Z PBHV2160Z All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2015. All rights reserved Product data sheet 24 June 2015 2 / 13