PBHV3160ZX Nexperia

PBHV3160Z 600 V, 0.1 A PNP high-voltage low VCEsat (BISS) transistor 18 August 2014 Product data sheet 1. General description PNP high-voltage low V Breakthrough In Small Signal (BISS) transistor in a medium CEsat power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits High voltage Low collector-emitter saturation voltage V CEsat High collector current capability I C High collector current gain h at high I FE C AEC-Q101 qualified 3. Applications Electronic ballast for fluorescent lighting LED driver for LED chain module LCD backlighting HID front lighting Automotive motor management Hook switch for wired telecom Switch Mode Power Supply (SMPS) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - -600 V CEO voltage I collector current - - -0.1 A C h DC current gain V = -10 V I = -10 mA T = 25 C 70 130 - FE CE C ambNexperia PBHV3160Z 600 V, 0.1 A PNP high-voltage low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base 4 2, 4 2 C collector 1 3 E emitter 1 2 3 3 4 C collector SC-73 (SOT223) sym028 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PBHV3160Z SC-73 plastic surface-mounted package with increased heatsink 4 SOT223 leads 7. Marking Table 4. Marking codes Type number Marking code PBHV3160Z HV316Z PBHV3160Z All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 18 August 2014 2 / 14