X-On Electronics has gained recognition as a prominent supplier of PBHV2160ZX Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBHV2160ZX Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PBHV2160ZX Nexperia

Name: PBHV2160ZX
Brand: Nexperia
SKU: PBHV2160ZX_Nexperia
Availability: InStock
Rating: 5 (11 reviews)

PBHV2160ZX electronic component of Nexperia

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See Product Specifications

Part No.	PBHV2160ZX
Manufacturer:	Nexperia
Category:	Bipolar Transistors - BJT
Description:	NXP Semiconductors Bipolar Transistors - BJT 0.1A NPN High- Voltage Transistor
Datasheet:	PBHV2160ZX Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.6863 ea
Line Total: USD 0.69

Availability - 4579
Ship by Fri. 07 Mar to Tue. 11 Mar

MOQ: 1 Multiples: 1
Pack Size: 1

PBHV2160ZX More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

4579

Ship by Fri. 07 Mar to Tue. 11 Mar

MOQ : 1
Multiples : 1

1 : USD 0.6863
10 : USD 0.5075
100 : USD 0.3278
500 : USD 0.2464
1000 : USD 0.2101
2000 : USD 0.1936
5000 : USD 0.1815
10000 : USD 0.1771

960

Ship by Fri. 07 Mar to Tue. 11 Mar

MOQ : 1
Multiples : 1

1 : USD 0.77
10 : USD 0.5292
61 : USD 0.294
166 : USD 0.2786
500 : USD 0.2674

Specifications

Manufacturer

Nexperia Nexperia

Product Category

Bipolar Transistors - BJT Bipolar Transistors - BJT

RoHS - XON

Y Y

Technology

Si Si

Mounting Style

Smd/Smt Smd/Smt

Package / Case

SOT - 223 - 4 SOT - 223 - 4

Transistor Polarity

Npn Npn

Configuration

Single Single

Maximum DC Collector Current

100 mA 100 mA

Collector- Emitter Voltage VCEO Max

600 V 600 V

Collector- Base Voltage VCBO

600 V 600 V

Emitter- Base Voltage VEBO

6 V 6 V

Collector-Emitter Saturation Voltage

65 mV 65 mV

Pd - Power Dissipation

1.4 W 1.4 W

Gain Bandwidth Product fT

- -

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 150 C + 150 C

Packaging

Reel Reel

Dc Current Gain Hfe Max

125 @ 10 mA , 10 v 125 @ 10 mA , 10 v

Brand

Nexperia Nexperia

Continuous Collector Current

100 mA 100 mA

Dc Collector/Base Gain Hfe Min

70 At 10 Ma, 10 V 70 At 10 Ma, 10 V

Factory Pack Quantity :

1000 1000

Cnhts

8541290000 8541290000

Hts Code

8541290095 8541290095

Mxhts

85412999 85412999

Product Type

Bjts - Bipolar Transistors Bjts - Bipolar Transistors

Subcategory

Transistors Transistors

Taric

8541290000 8541290000

Notes:- Show Stocked Products With Similar Attributes.

PBHV2160ZX Alternative Parts

We are delighted to provide the PBHV2160ZX from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBHV2160ZX and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

PBHV2160Z 600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor 24 June 2015 Product data sheet 1. General description NPN high-voltage low V Breakthrough In Small Signal (BISS) transistor in a SOT223 CEsat (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV3160Z 2. Features and benefits Low collector-emitter saturation voltage V CEsat High collector current capability High collector current gain h at high I FE C 3. Applications Electronic ballast for fluorecent lighting LED driver for LED chain module LCD backlighting HID front lighting Hook switch for wired telecom Switch Mode Power Supply (SMPS) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - 600 V CEO voltage I collector current - - 0.1 A CNexperia PBHV2160Z 600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base 4 2, 4 2 C collector 1 3 E emitter 1 2 3 3 4 C collector SC-73 (SOT223) sym016 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PBHV2160Z SC-73 plastic surface-mounted package with increased heatsink 4 SOT223 leads 7. Marking Table 4. Marking codes Type number Marking code PBHV2160Z HV216Z PBHV2160Z All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 24 June 2015 2 / 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

NEXPERIA USA INC
Nexperia USA Inc.

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Availability	Price	Buy Price	Quantity
4579 Ship by Fri. 07 Mar to Tue. 11 Mar MOQ : 1 Multiples : 1	1 : USD 0.6863 10 : USD 0.5075 100 : USD 0.3278 500 : USD 0.2464 1000 : USD 0.2101 2000 : USD 0.1936 5000 : USD 0.1815 10000 : USD 0.1771

960 Ship by Fri. 07 Mar to Tue. 11 Mar MOQ : 1 Multiples : 1	1 : USD 0.77 10 : USD 0.5292 61 : USD 0.294 166 : USD 0.2786 500 : USD 0.2674

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