PBSS4032NZ Nexperia

PBSS4032NZ 30 V, 4.9 A NPN low V (BISS) transistor CEsat Rev. 01 31 March 2010 Product data sheet 1. Product profile 1.1 General description NPN low V Breakthrough In Small Signal (BISS) transistor in a medium power CEsat SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4032PZ. 1.2 Features and benefits Low collector-emitter saturation voltage V CEsat Optimized switching time High collector current capability I and I C CM High collector current gain (h ) at high I FE C High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications DC-to-DC conversion Battery-driven devices Power management Charging circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 30 V CEO I collector current - - 4.9 A C I peak collector current single pulse -- 10 A CM t 1ms p 1 R collector-emitter I =4A -45 62.5 m CEsat C saturation resistance I =400 mA B 1 Pulse test: t 300 s 0.02. pPBSS4032NZ NXP Semiconductors 30 V, 4.9 A NPN low V (BISS) transistor CEsat 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1base 4 2, 4 2 collector 3emitter 1 4 collector 132 3 sym016 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS4032NZ SC-73 plastic surface-mounted package with increased SOT223 heat sink 4 leads 4. Marking Table 4. Marking codes Type number Marking code PBSS4032NZ PB4032NZ 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 30 V CBO V collector-emitter voltage open base - 30 V CEO V emitter-base voltage open collector - 5 V EBO I collector current - 4.9 A C I peak collector current single pulse -10 A CM t 1ms p I base current - 1 A B PBSS4032NZ 1 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 31 March 2010 2 of 15