PBSS4032PX Nexperia

PBSS4032PX 30 V, 4.2 A PNP low V (BISS) transistor CEsat Rev. 01 1 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low V Breakthrough In Small Signal (BISS) transistor in a medium power and CEsat flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4032NX. 1.2 Features and benefits Very low collector-emitter saturation voltage V CEsat Optimized switching time High collector current capability I and I C CM High collector current gain (h ) at high I FE C High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 30 V CEO I collector current - - 4.2 A C I peak collector current single pulse -- 10 A CM t 1ms p 1 R collector-emitter I = 4A -58 86 m CEsat C saturation resistance I = 400 mA B 1 Pulse test: t 300 s 0.02. pPBSS4032PX NXP Semiconductors 30 V, 4.2 A PNP low V (BISS) transistor CEsat 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1emitter 2 2 collector 3base 3 1 321 006aaa231 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS4032PX SC-62 plastic surface-mounted package 3 leads SOT89 4. Marking Table 4. Marking codes 1 Type number Marking code PBSS4032PX *6J 1 * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 30 V CBO V collector-emitter voltage open base - 30 V CEO V emitter-base voltage open collector - 5V EBO I collector current - 4.2 A C I peak collector current single pulse - 10 A CM t 1ms p I base current - 1A B PBSS4032PX 1 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 1 April 2010 2 of 15