X-On Electronics has gained recognition as a prominent supplier of PBSS4041NT Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS4041NT Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PBSS4041NT Nexperia

PBSS4041NT electronic component of Nexperia
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See Product Specifications
Part No.PBSS4041NT
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: TRANSISTOR,NPN,60V,3.8A,SOT23
Datasheet: PBSS4041NT Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

100: USD 0.34 ea
Line Total: USD 34

Availability - 0
MOQ: 100  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 17 Jul to Tue. 23 Jul
MOQ : 100
Multiples : 1
100 : USD 0.3667
500 : USD 0.236
1500 : USD 0.2316

   
Manufacturer
Product Category
Transistor Polarity
Brand
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Gain Bandwidth Ft Typ
Operating Temperature Min
Operating Temperature Range
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We are delighted to provide the PBSS4041NT from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS4041NT and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PBSS4041NT 60 V, 3.8 A NPN low V (BISS) transistor CEsat Rev. 01 31 January 2010 Product data sheet 1. Product profile 1.1 General description NPN low V Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) CEsat small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4041PT. 1.2 Features Very low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High collector current gain (h ) at high I FE C High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 60 V CEO I collector current - - 3.8 A C I peak collector current single pulse -- 8 A CM t 1ms p 1 R collector-emitter I =3A -46 66 m CEsat C saturation resistance I =300 mA B 1 Pulse test: t 300 s 0.02. pPBSS4041NT NXP Semiconductors 60 V, 3.8 A NPN low V (BISS) transistor CEsat 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1base 3 3 2emitter 3 collector 1 12 2 sym021 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS4041NT - plastic surface-mounted package 3 leads SOT23 4. Marking Table 4. Marking codes 1 Type number Marking code PBSS4041NT *BK 1 * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 60 V CBO V collector-emitter voltage open base - 60 V CEO V emitter-base voltage open collector - 5 V EBO I collector current - 3.8 A C I peak collector current single pulse -8 A CM t 1ms p I base current - 1 A B PBSS4041NT 1 NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 31 January 2010 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.

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