X-On Electronics has gained recognition as a prominent supplier of PBSS4041NZ,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS4041NZ,115 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PBSS4041NZ,115 Nexperia

PBSS4041NZ,115 electronic component of Nexperia
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Part No.PBSS4041NZ,115
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT Single NPN 60V 7A 770mW 105MHz
Datasheet: PBSS4041NZ,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7249 ea
Line Total: USD 0.72 
Availability - 11267
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
221
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ : 1
Multiples : 1
1 : USD 0.6453
10 : USD 0.5412
30 : USD 0.4902
100 : USD 0.439
500 : USD 0.3519
1000 : USD 0.3349

11267
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 0.7249
10 : USD 0.5346
100 : USD 0.4114
500 : USD 0.3476
1000 : USD 0.3102
2000 : USD 0.2992
5000 : USD 0.2959
10000 : USD 0.2904
25000 : USD 0.2871

1940
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 2000
Multiples : 2000
2000 : USD 0.3466
5000 : USD 0.3419

19400
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1352
Multiples : 1
1352 : USD 0.3606

68494
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1352
Multiples : 1
1352 : USD 0.3606

2910
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1352
Multiples : 1
1352 : USD 0.3606

79164
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1352
Multiples : 1
1352 : USD 0.3606

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the PBSS4041NZ,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS4041NZ,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PBSS4041NZ 60 V, 7 A NPN low VCEsat (BISS) transistor Rev. 2 8 August 2012 Product data sheet 1. Product profile 1.1 General description NPN low V Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) CEsat medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4041PZ. 1.2 Features and benefits Very low collector-emitter saturation High energy efficiency due to less heat voltage V generation CEsat High collector current capability I and AEC-Q101 qualified C I CM Smaller required PCB area than for High collector current gain (h ) at conventional transistors FE high I C 1.3 Applications Loadswitch Charging circuits Battery-driven devices Power switches (e.g. motors, fans) Power management 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - 60 V CEO voltage I collector current - - 7 A C I peak collector current single pulse t 1ms --15 A CM p R collector-emitter I =6A I = 600 mA pulsed - 17.5 25 m CEsat C B saturation resistance t 300 s 0.02 T =25C p ambPBSS4041NZ Nexperia 60 V, 7 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base C 4 2 C collector 3E emitter B 4 C collector 132 E sym123 SOT223 (SC-73) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS4041NZ SC-73 plastic surface-mounted package with increased heatsink SOT223 4 leads 4. Marking Table 4. Marking codes Type number Marking code PBSS4041NZ PB4041NZ 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 60 V CBO V collector-emitter voltage open base - 60 V CEO V emitter-base voltage open collector - 5 V EBO I collector current - 7 A C I peak collector current single pulse t 1ms - 15 A CM p I base current - 1 A B 1 P total power dissipation T 25 C - 770 mW tot amb 2 - 1700 mW 3 - 2600 mW PBSS4041NZ All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 8 August 2012 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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