PBSS4041PT Nexperia

PBSS4041PT 60 V, 2.7 A PNP low V (BISS) transistor CEsat Rev. 02 9 March 2010 Product data sheet 1. Product profile 1.1 General description PNP low V Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) CEsat small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4041NT. 1.2 Features and benefits Very low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High collector current gain (h ) at high I FE C High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 60 V CEO I collector current - - 2.7 A C I peak collector current single pulse -- 8A CM t 1ms p 1 R collector-emitter I = 3A -80 120 m CEsat C saturation resistance I = 300 mA B 1 Pulse test: t 300 s 0.02. pPBSS4041PT NXP Semiconductors 60 V, 2.7 A PNP low V (BISS) transistor CEsat 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1base 3 3 2emitter 3 collector 1 12 2 sym013 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS4041PT - plastic surface-mounted package 3 leads SOT23 4. Marking Table 4. Marking codes 1 Type number Marking code PBSS4041PT *BL 1 * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 60 V CBO V collector-emitter voltage open base - 60 V CEO V emitter-base voltage open collector - 5V EBO I collector current - 2.7 A C I peak collector current single pulse - 8A CM t 1ms p I base current - 1A B PBSS4041PT 2 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 9 March 2010 2 of 15