X-On Electronics has gained recognition as a prominent supplier of PBSS4041SPN,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS4041SPN,115 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PBSS4041SPN,115 Nexperia

PBSS4041SPN,115 electronic component of Nexperia
PBSS4041SPN,115 Nexperia
PBSS4041SPN,115 Bipolar Transistors - BJT
PBSS4041SPN,115  Semiconductors

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See Product Specifications
Part No. PBSS4041SPN,115
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT Dual +/-60V +6.7A -5.9A 0.73W 130MHz
Datasheet: PBSS4041SPN,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1000
Multiples : 1000
1000 : USD 0.5728
N/A

Obsolete
0
MOQ : 1000
Multiples : 1000
1000 : USD 0.4668
N/A

Obsolete
0
MOQ : 1000
Multiples : 1000
1000 : USD 0.5948
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 2.4994
10 : USD 0.9087
100 : USD 0.8393
250 : USD 0.8233
500 : USD 0.7992
1000 : USD 0.4923
2000 : USD 0.4683
5000 : USD 0.4442
10000 : USD 0.4272
N/A

Obsolete
0
MOQ : 1000
Multiples : 1000
1000 : USD 0.7029
N/A

Obsolete
0
MOQ : 1000
Multiples : 1000
1000 : USD 0.6548
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Gain Bandwidth Product fT
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PBSS4041SPN,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS4041SPN,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PBSS4041SPN 60 V NPN/PNP low V (BISS) transistor CEsat Rev. 2 20 October 2010 Product data sheet 1. Product profile 1.1 General description NPN/PNP low V Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) CEsat medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN PNP/PNP complement complement Nexperia Name PBSS4041SPN SOT96-1 SO8 PBSS4041SN PBSS4041SP 1.2 Features and benefits Very low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High collector current gain (h ) at high I FE C High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications Loadswitch Charging circuits Battery-driven devices Power switches (e.g. motors, fans) Power management 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit transistor TR1 NPN low V CEsat collector-emitter voltage open base - - 60 V V CEO collector current - - 6.7 A I C peak collector current single pulse t 1ms --15 A I CM p 1 collector-emitter I =4A I =0.2 A - 3248m R CEsat C B saturation resistancePBSS4041SPN Nexperia 60 V NPN/PNP low V (BISS) transistor CEsat Table 2. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit TR2 PNP low V transistor CEsat V collector-emitter voltage open base - - 60 V CEO I collector current - - 5.9 A C I peak collector current single pulse t 1ms - - 15 A CM p 1 R collector-emitter I = 4A I = 0.4 A - 4770m CEsat C B saturation resistance 1 Pulse test: t 300 s 0.02. p 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol 1emitterTR1 8 5 8765 2baseTR1 3emitterTR2 TR1 TR2 4baseTR2 5 collector TR2 1 4 1234 006aaa985 6 collector TR2 7 collector TR1 8 collector TR1 3. Ordering information Table 4. Ordering information Type number Package Name Description Version PBSS4041SPN SO8 plastic small outline package 8 leads body width 3.9 mm SOT96-1 4. Marking Table 5. Marking codes Type number Marking code PBSS4041SPN 4041SPN PBSS4041SPN All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 20 October 2010 2 of 20

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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