X-On Electronics has gained recognition as a prominent supplier of PBSS5112PAP Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS5112PAP Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PBSS5112PAP Nexperia

PBSS5112PAP electronic component of Nexperia
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Part No.PBSS5112PAP
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: TRANS, PNP/PNP, 120V, 1A, DFN2020-6
Datasheet: PBSS5112PAP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.7296 ea
Line Total: USD 3.65 
Availability - 0
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 5
Multiples : 1
5 : USD 0.7296
10 : USD 0.6054
100 : USD 0.4214
500 : USD 0.3285
1000 : USD 0.2425

   
Manufacturer
Product Category
Transistor Polarity
Brand
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
Operating Temperature Range
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We are delighted to provide the PBSS5112PAP from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS5112PAP and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PBSS5112PAP 120 V, 1 A PNP/PNP low VCEsat (BISS) transistor 30 November 2012 Product data sheet 1. Product profile 1.1 General description PNP/PNP low V Breakthrough In Small Signal (BISS) transistor in a leadless CEsat medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4112PANP. NPN/NPN complement: PBSS4112PAN. 1.2 Features and benefits Very low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High collector current gain h at high I FE C Reduced Printed-Circuit Board (PCB) requirements High energy efficiency due to less heat generation AEC-Q101 qualified 1.3 Applications Load switch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V collector-emitter open base - - -120 V CEO voltage I collector current - - -1 A C I peak collector current single pulse t 1 ms - - -1.5 A CM p V emitter-base voltage open collector - - -7 V EBO Per transistor R collector-emitter I = -500 mA I = -50 mA pulsed - - 440 m CEsat C B saturation resistance t 300 s 0.02 T = 25 C p amb Scan or click this QR code to view the latest information for this productNXP Semiconductors PBSS5112PAP 120 V, 1 A PNP/PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 E1 emitter TR1 C1 B2 E2 6 5 4 2 B1 base TR1 TR2 7 8 3 C2 collector TR2 TR1 4 E2 emitter TR2 E1 B1 C2 1 2 3 5 B2 base TR2 Transparent top view sym138 6 C1 collector TR1 DFN2020-6 (SOT1118) 7 C1 collector TR1 8 C2 collector TR2 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS5112PAP DFN2020-6 plastic thermal enhanced ultra thin small outline package no SOT1118 leads 6 terminals body 2 x 2 x 0.65 mm 4. Marking Table 4. Marking codes Type number Marking code PBSS5112PAP 2S 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V collector-base voltage open emitter - -120 V CBO V collector-emitter voltage open base - -120 V CEO V emitter-base voltage open collector - -7 V EBO I collector current - -1 A C I peak collector current single pulse t 1 ms - -1.5 A CM p I base current - -0.3 A B PBSS5112PAP All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved Product data sheet 30 November 2012 2 / 17

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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