PBSS4041NX Nexperia

PBSS4041NX 60 V, 6.2 A NPN low VCEsat (BISS) transistor 11 December 2012 Product data sheet 1. Technical summary NPN low V Breakthrough In Small Signal (BISS) transistor in a medium power and CEsat flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4041PX. 2. Features and benefits Very low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High collector current gain (h ) at high I FE C High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 3. Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - 60 V CEO voltage I collector current - - 6.2 A C I peak collector current single pulse t 1 ms - - 15 A CM p R collector-emitter I = 4 A I = 400 mA pulsed - 25 35 m CEsat C B saturation resistance t 300 s 0.02 T = 25 C p amb Scan or click this QR code to view the latest information for this productNXP Semiconductors PBSS4041NX 60 V, 6.2 A NPN low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 E emitter 2 2 C collector 3 3 B base 1 3 2 1 sym042 SOT89 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS4041NX SOT89 plastic surface-mounted package die pad for good heat transfer SOT89 3 leads 7. Marking Table 4. Marking codes Type number Marking code 1 PBSS4041NX %6F 1 % = placeholder for manufacturing site code 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 60 V CBO V collector-emitter voltage open base - 60 V CEO V emitter-base voltage open collector - 5 V EBO I collector current - 6.2 A C I peak collector current single pulse t 1 ms - 15 A CM p I base current - 1 A B P total power dissipation T 25 C 1 - 600 mW tot amb 2 - 1650 mW 3 - 2500 mW PBSS4041NX All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved Product data sheet 11 December 2012 2 / 14