PBSS4041NZ Nexperia

PBSS4041NZ 60 V, 7 A NPN low VCEsat (BISS) transistor Rev. 2 8 August 2012 Product data sheet 1. Product profile 1.1 General description NPN low V Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) CEsat medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4041PZ. 1.2 Features and benefits Very low collector-emitter saturation High energy efficiency due to less heat voltage V generation CEsat High collector current capability I and AEC-Q101 qualified C I CM Smaller required PCB area than for High collector current gain (h ) at conventional transistors FE high I C 1.3 Applications Loadswitch Charging circuits Battery-driven devices Power switches (e.g. motors, fans) Power management 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - 60 V CEO voltage I collector current - - 7 A C I peak collector current single pulse t 1ms --15 A CM p R collector-emitter I =6A I = 600 mA pulsed - 17.5 25 m CEsat C B saturation resistance t 300 s 0.02 T =25C p amb SOT223PBSS4041NZ NXP Semiconductors 60 V, 7 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base C 4 2 C collector 3E emitter B 4 C collector 132 E sym123 SOT223 (SC-73) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS4041NZ SC-73 plastic surface-mounted package with increased heatsink SOT223 4 leads 4. Marking Table 4. Marking codes Type number Marking code PBSS4041NZ PB4041NZ 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 60 V CBO V collector-emitter voltage open base - 60 V CEO V emitter-base voltage open collector - 5 V EBO I collector current - 7 A C I peak collector current single pulse t 1ms - 15 A CM p I base current - 1 A B 1 P total power dissipation T 25 C - 770 mW tot amb 2 - 1700 mW 3 - 2600 mW PBSS4041NZ All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 8 August 2012 2 of 15