X-On Electronics has gained recognition as a prominent supplier of PBSS4140DPN Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS4140DPN Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PBSS4140DPN Nexperia

PBSS4140DPN electronic component of Nexperia

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Part No.	PBSS4140DPN
Manufacturer:	Nexperia
Category:	Bipolar Transistors - BJT
Description:	TRANSISTOR, SOT-457 PBSS4140DPN is a single N-channel MOSFET in an SMD package with an ID of 8A.
Datasheet:	PBSS4140DPN Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

100: USD 0.1876 ea
Line Total: USD 18.76

Availability - 0

MOQ: 100 Multiples: 1
Pack Size: 1

PBSS4140DPN More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Thu. 06 Feb to Wed. 12 Feb MOQ : 100 Multiples : 1	100 : USD 0.1876 500 : USD 0.1457

Specifications

Manufacturer Nexperia Nexperia
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Transistor Polarity NPN, PNP NPN, PNP
Brand Nexperia Nexperia
Collector Emitter Voltage Vbrceo 40 V 40 V
Power Dissipation Pd 370 mW 370 mW
Dc Collector Current - 1 A - 1 A
Dc Current Gain Hfe 300hFE 300hFE
Transistor Case Style SOT - 457 SOT - 457
No. Of Pins 6Pins 6Pins
Operating Temperature Max 150 C 150 C
Msl MSL 1 - Unlimited MSL 1 - Unlimited
Svhc No SVHC (27 - Jun - 2018) No SVHC (27 - Jun - 2018)
Collector Emitter Saturation Voltage Vceon 250 V 250 V
Continuous Collector Current Ic Max 1 A 1 A
Current Ic @ Vce Sat 50 mA 50 mA
Current Ic Continuous A Max 1 A 1 A
Current Ic Hfe 500 mA 500 mA
Full Power Rating Temperature 25C 25C
Gain Bandwidth Ft Typ 150Mhz 150Mhz
Hfe Min 300 300
Module Configuration Dual Dual
Operating Temperature Min - 65 C - 65 C
Operating Temperature Range - 65 C To + 150 C - 65 C To + 150 C
Power Dissipation Ptot Max 750 mW 750 mW
Power Dissipation Per Device Max 750 mW 750 mW
Smd Marking M2 M2
Voltage Vcbo 40 V 40 V

We are delighted to provide the PBSS4140DPN from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS4140DPN and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

The PBSS4140DPN is a Nexperia P-Channel Mosfet with an output current rating of 140A. It features a low on-state resistance and fast switching speed, making it ideal for high-power applications. The part is packaged in a PowerPAK SO-8 package with a maximum PD of 6.6 W. It has an operating voltage of up to -20V and is AEC-Q101 qualified.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

NEXPERIA USA INC
Nexperia USA Inc.

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