X-On Electronics has gained recognition as a prominent supplier of PBSS4160DPN,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS4160DPN,115 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PBSS4160DPN,115 Nexperia

PBSS4160DPN,115 electronic component of Nexperia
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See Product Specifications
Part No.PBSS4160DPN,115
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT LO VCESAT(BISS)TRANS
Datasheet: PBSS4160DPN,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3718 ea
Line Total: USD 0.37 
Availability - 22195
Ship by Fri. 29 Nov to Tue. 03 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
8730
Ship by Tue. 03 Dec to Mon. 09 Dec
MOQ : 831
Multiples : 1
831 : USD 0.1565
1000 : USD 0.1417
3000 : USD 0.1147
6000 : USD 0.1128

177
Ship by Tue. 10 Dec to Fri. 13 Dec
MOQ : 5
Multiples : 5
5 : USD 0.3248
50 : USD 0.2645
150 : USD 0.2387
500 : USD 0.2064
3000 : USD 0.192
6000 : USD 0.1835

22195
Ship by Fri. 29 Nov to Tue. 03 Dec
MOQ : 1
Multiples : 1
1 : USD 0.3718
10 : USD 0.2486
100 : USD 0.1287
1000 : USD 0.121
3000 : USD 0.1012
9000 : USD 0.0979
24000 : USD 0.0924

2071920
Ship by Tue. 03 Dec to Mon. 09 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.1269
1068000 : USD 0.116
1602000 : USD 0.1079

1053420
Ship by Tue. 03 Dec to Mon. 09 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.1269
546000 : USD 0.116
819000 : USD 0.1079

8730
Ship by Tue. 03 Dec to Mon. 09 Dec
MOQ : 831
Multiples : 1
831 : USD 0.1532

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
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Taric
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We are delighted to provide the PBSS4160DPN,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS4160DPN,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PBSS4160DPN 60 V, 1 A NPN/PNP low V (BISS) transistor CEsat Rev. 03 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP low V Breakthrough in Small Signal (BISS) transistor pair in a SOT457 CEsat (SC-74) Surface Mounted Device (SMD) plastic package. 1.2 Features Low collector-emitter saturation voltage V CEsat High collector current capability: I and I C CM High collector current gain (h ) at high I FE C High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications Complementary MOSFET driver Half and full bridge motor drivers Dual low power switches (e.g. motors, fans) Automotive applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit TR1 (NPN) V collector-emitter voltage open base - - 60 V CEO 1 I collector current (DC) --1 A C I peak collector current single pulse t 1 ms --2 A CM p 2 R collector-emitter saturation I =1 A I =100 mA - 200 250 m CEsat C B resistance TR2 (PNP) V collector-emitter voltage open base - - 60 V CEO 1 I collector current (DC) -- 900 mA C I peak collector current single pulse t 1ms - - 2A CM p 2 R collector-emitter saturation I = 1A I = 100 mA - 250 330 m CEsat C B resistance 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm . 2 Pulse test: t 300 s 0.02. p

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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