X-On Electronics has gained recognition as a prominent supplier of PBSS4160DPN,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS4160DPN,115 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PBSS4160DPN,115 Nexperia

PBSS4160DPN,115 electronic component of Nexperia
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Part No.PBSS4160DPN,115
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT LO VCESAT(BISS)TRANS
Datasheet: PBSS4160DPN,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3795 ea
Line Total: USD 0.38 
Availability - 22341
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
8730
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 782
Multiples : 1
782 : USD 0.1505
3000 : USD 0.1314

178
Ship by Fri. 22 Nov to Wed. 27 Nov
MOQ : 5
Multiples : 5
5 : USD 0.3248
50 : USD 0.2645
150 : USD 0.2387
500 : USD 0.2064
3000 : USD 0.1919
6000 : USD 0.1835

22341
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3795
10 : USD 0.2599
100 : USD 0.1345
1000 : USD 0.1208
3000 : USD 0.1058
9000 : USD 0.1024
24000 : USD 0.0966

2069010
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.1269
1068000 : USD 0.116
1602000 : USD 0.1079

2910
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.1158

8730
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 782
Multiples : 1
782 : USD 0.1505
3000 : USD 0.1314

1053420
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.1269
546000 : USD 0.116
819000 : USD 0.1079

17460
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.1158
6000 : USD 0.1126
9000 : USD 0.1109
12000 : USD 0.1096
15000 : USD 0.1057

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
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We are delighted to provide the PBSS4160DPN,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS4160DPN,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PBSS4160DPN 60 V, 1 A NPN/PNP low V (BISS) transistor CEsat Rev. 03 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP low V Breakthrough in Small Signal (BISS) transistor pair in a SOT457 CEsat (SC-74) Surface Mounted Device (SMD) plastic package. 1.2 Features Low collector-emitter saturation voltage V CEsat High collector current capability: I and I C CM High collector current gain (h ) at high I FE C High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications Complementary MOSFET driver Half and full bridge motor drivers Dual low power switches (e.g. motors, fans) Automotive applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit TR1 (NPN) V collector-emitter voltage open base - - 60 V CEO 1 I collector current (DC) --1 A C I peak collector current single pulse t 1 ms --2 A CM p 2 R collector-emitter saturation I =1 A I =100 mA - 200 250 m CEsat C B resistance TR2 (PNP) V collector-emitter voltage open base - - 60 V CEO 1 I collector current (DC) -- 900 mA C I peak collector current single pulse t 1ms - - 2A CM p 2 R collector-emitter saturation I = 1A I = 100 mA - 250 330 m CEsat C B resistance 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm . 2 Pulse test: t 300 s 0.02. p

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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