PBSS4260PANPS Nexperia

PBSS4260PANPS 60 V, 2 A NPN/PNP low VCEsat (BISS) double transistor 4 February 2016 Product data sheet 1. General description NPN/PNP low V Breakthrough In Small Signal (BISS) double transistor in a leadless CEsat medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN/NPN complement: PBSS4260PANS PNP/PNP complement: PBSS5260PAPS 2. Features and benefits Very low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High collector current gain h at high I FE C Reduced Printed-Circuit Board (PCB) requirements Exposed heat sink for excellent thermal and electrical conductivity High energy efficiency due to less heat generation Suitable for Automatic Optical Inspection (AOI) of solder joints AEC-Q101 qualified 3. Applications Load switch Battery-driven devices Power management Charging circuits LED lighting Power switches (e.g. motors, fans) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor, for the PNP transistor with negative polarity V collector-emitter open base - - 60 V CEO voltage I collector current - - 2 A C I peak collector current single pulse t 1 ms - - 3 A CM p Scan or click this QR code to view the latest information for this productNXP Semiconductors PBSS4260PANPS 60 V, 2 A NPN/PNP low VCEsat (BISS) double transistor Symbol Parameter Conditions Min Typ Max Unit TR1 (NPN) R collector-emitter I = 1 A I = 50 mA pulsed - - 200 m CEsat C B saturation resistance t 300 s 0.02 T = 25 C p amb TR2 (PNP) R collector-emitter I = -1 A I = -50 mA pulsed - - 310 m CEsat C B saturation resistance t 300 s 0.02 T = 25 C p amb 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol C1 B2 1 E1 emitter TR1 6 5 4 E2 2 B1 base TR1 TR2 7 8 3 C2 collector TR2 TR1 4 E2 emitter TR2 E1 B1 C2 1 2 3 5 B2 base TR2 sym139 Transparent top view 6 C1 collector TR1 DFN2020D-6 (SOT1118D) 7 C1 collector TR1 8 C2 collector TR2 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS4260PANPS DFN2020D-6 DFN2020D-6: plastic, thermally enhanced ultra thin and SOT1118D small outline package no leads 6 terminals body 2 x 2 x 0.65 mm 7. Marking Table 4. Marking codes Type number Marking code PBSS4260PANPS 3D PBSS4260PANPS All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2016. All rights reserved Product data sheet 4 February 2016 2 / 21