PBSS4320T/DG,215 NXP

DISCRETE SEMICONDUCTORS DATA SHEET PBSS4320T 20 V NPN low V transistor CEsat Product data sheet 2004 Mar 18 Supersedes data of 2002 Aug 08 NXP Semiconductors Product data sheet 20 V NPN low V transistor PBSS4320T CEsat FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage V and CEsat SYMBOL PARAMETER MAX. UNIT corresponding low R CEsat V collector-emitter voltage 20 V CEO High collector current capability I collector current (DC) 2 A C High collector current gain I repetitive peak collector 3 A CRP Improved efficiency due to reduced heat generation. current R equivalent on-resistance 105 m CEsat APPLICATIONS PINNING Power management applications Low and medium power DC/DC convertors PIN DESCRIPTION Supply line switching 1 base Battery chargers 2 emitter Linear voltage regulation with low voltage drop-out 3 collector (LDO). DESCRIPTION handbook, halfpage NPN low V transistor in a SOT23 plastic package. CEsat 3 3 PNP complement: PBSS5320T. 1 MARKING (1) TYPE NUMBER MARKING CODE 2 1 2 PBSS4320T ZG* Top view MAM255 Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. Fig.1 Simplified outline (SOT23) and symbol. * = W: Made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION PBSS4320T plastic surface mounted package; 3 leads SOT23 2004 Mar 18 2