PBSS4320X,135 Nexperia

PBSS4320X 20 V, 3 A NPN low VCEsat (BISS) transistor 27 May 2019 Product data sheet 1. General description NPN low V transistor in a medium power flat lead SOT89 plastic package. CEsat PNP complement: PBSS5320X 2. Features and benefits SOT89 (SC-62) package Low collector-emitter saturation voltage V CEsat High collector current capability: I and I C CM Higher efficiency leading to less heat generation Reduced printed-circuit board requirements. AEC-Q101 qualified 3. Applications Power management DC/DC converters Supply line switching Battery charger LCD backlighting. Peripheral drivers Driver in low supply voltage applications (e.g. lamps and LEDs). Inductive load driver (e.g. relays, buzzers and motors). 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - 20 V CEO voltage I collector current 1 - - 3 A C I peak collector current single pulse t 1 ms - - 5 A CM p h DC current gain V = 2 V I = 0.1 A 220 - - FE CE C R collector-emitter I = 3 A I = 300 mA 2 - 85 105 m CEsat C B saturation resistance 2 1 Device mounted on a ceramic printed-circuit board 7 cm , single-sided copper, tin-plated. 2 Pulsed test: t 300 s 0.02 pNexperia PBSS4320X 20 V, 3 A NPN low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 E emitter C 2 C collector B 3 B base 3 2 1 E SOT89 sym123 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS4320X SOT89 plastic surface-mounted package die pad for good heat transfer SOT89 3 leads 7. Marking Table 4. Marking codes Type number Marking code PBSS4320X S44 PBSS4320X All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2019. All rights reserved Product data sheet 27 May 2019 2 / 13