X-On Electronics has gained recognition as a prominent supplier of PBSS4032SPN,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS4032SPN,115 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PBSS4032SPN,115 Nexperia

PBSS4032SPN,115 electronic component of Nexperia
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See Product Specifications
Part No.PBSS4032SPN,115
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: NXP Semiconductors Bipolar Transistors - BJT Dual -30V 5.7A -5.7A 0.73W 140MHz
Datasheet: PBSS4032SPN,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1000
Multiples : 1000
1000 : USD 1.1489
2000 : USD 1.1389
3000 : USD 1.129
4000 : USD 1.1189
5000 : USD 1.1089
6000 : USD 1.0988
10000 : USD 1.0886
20000 : USD 1.0786
50000 : USD 1.0684
N/A

Obsolete
0
MOQ : 1000
Multiples : 1000
1000 : USD 0.4078
N/A

Obsolete
0
MOQ : 1000
Multiples : 1000
1000 : USD 0.5914
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.1385
10 : USD 0.9434
30 : USD 0.8478
100 : USD 0.7502
500 : USD 0.6939
1000 : USD 0.664
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 2.0304
10 : USD 0.846
100 : USD 0.6739
500 : USD 0.6048
1000 : USD 0.6037
2000 : USD 0.5962
5000 : USD 0.5865
10000 : USD 0.5767
N/A

Obsolete
0
MOQ : 17
Multiples : 1
17 : USD 0.3798
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the PBSS4032SPN,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS4032SPN,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PBSS4032SPN 30 V NPN/PNP low V (BISS) transistor CEsat Rev. 2 14 October 2010 Product data sheet 1. Product profile 1.1 General description NPN/PNP low V Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) CEsat medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN PNP/PNP complement complement Nexperia Name PBSS4032SPN SOT96-1 SO8 PBSS4032SN PBSS4032SP 1.2 Features and benefits Low collector-emitter saturation voltage V CEsat Optimized switching time High collector current capability I and I C CM High collector current gain (h ) at high I FE C High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications DC-to-DC conversion Battery-driven devices Power management Charging circuits 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit TR1 NPN low V transistor CEsat V collector-emitter voltage open base - - 30 V CEO I collector current - - 5.7 A C I peak collector current single pulse t 1ms --10 A CM p 1 R collector-emitter I =4A I =0.4 A - 45 62.5 m CEsat C B saturation resistancePBSS4032SPN Nexperia 30 V NPN/PNP low V (BISS) transistor CEsat Table 2. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit TR2 PNP low V transistor CEsat V collector-emitter voltage open base - - 30 V CEO I collector current - - 4.8 A C I peak collector current single pulse t 1ms - - 10 A CM p 1 R collector-emitter I = 4A I = 0.4 A - 6598m CEsat C B saturation resistance 1 Pulse test: t 300 s 0.02. p 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol 1emitter TR1 8 5 8765 2 base TR1 3emitter TR2 TR1 TR2 4 base TR2 5 collector TR2 1 4 1234 006aaa985 6 collector TR2 7 collector TR1 8 collector TR1 3. Ordering information Table 4. Ordering information Type number Package Name Description Version PBSS4032SPN SO8 plastic small outline package 8 leads body width 3.9 mm SOT96-1 4. Marking Table 5. Marking codes Type number Marking code PBSS4032SPN 4032SPN PBSS4032SPN All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 14 October 2010 2 of 20

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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