PBSS4032SP,115 Nexperia

PBSS4032SP 30 V, 4.8 A PNP/PNP low V (BISS) transistor CEsat Rev. 2 13 October 2010 Product data sheet 1. Product profile 1.1 General description PNP/PNP low V Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) CEsat medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN NPN/PNP complement complement Nexperia Name PBSS4032SP SOT96-1 SO8 PBSS4032SN PBSS4032SPN 1.2 Features and benefits Low collector-emitter saturation voltage V CEsat Optimized switching time High collector current capability I and I C CM High collector current gain (h ) at high I FE C High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications DC-to-DC conversion Battery-driven devices Power management Charging circuits 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 30 V CEO I collector current - - 4.8 A C I peak collector current single pulse -- 10 A CM t 1ms p 1 R collector-emitter I = 4A I = 0.4 A -65 98 m CEsat C B saturation resistance 1 Pulse test: t 300 s 0.02. pPBSS4032SP Nexperia 30 V, 4.8 A PNP/PNP low V (BISS) transistor CEsat 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol 1emitter TR1 8 5 8765 2 base TR1 3emitter TR2 TR1 TR2 4 base TR2 5 collector TR2 1 4 1234 006aaa976 6 collector TR2 7 collector TR1 8 collector TR1 3. Ordering information Table 4. Ordering information Type number Package Name Description Version PBSS4032SP SO8 plastic small outline package 8 leads body width 3.9 mm SOT96-1 4. Marking Table 5. Marking codes Type number Marking code PBSS4032SP 4032SP 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V collector-base voltage open emitter - 30 V CBO V collector-emitter voltage open base - 30 V CEO V emitter-base voltage open collector - 5V EBO I collector current - 4.8 A C I peak collector current single pulse - 10 A CM t 1ms p I base current - 1A B 1 P total power dissipation T 25 C -0.73 W tot amb 2 -1 W 3 -1.7 W PBSS4032SP All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 13 October 2010 2 of 15