X-On Electronics has gained recognition as a prominent supplier of PBSS4032PT,215 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS4032PT,215 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PBSS4032PT,215 Nexperia

PBSS4032PT,215 electronic component of Nexperia
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Part No.PBSS4032PT,215
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 30 V 2.4 A 160MHz 1.1 W Surface Mount TO-236AB
Datasheet: PBSS4032PT,215 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.1659 ea
Line Total: USD 0.83 
Availability - 916
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
5820
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 498
Multiples : 1
498 : USD 0.2612
500 : USD 0.2167
1000 : USD 0.1964
3000 : USD 0.1586
6000 : USD 0.1473

916
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 5
Multiples : 5
5 : USD 0.1659
50 : USD 0.1334
150 : USD 0.1192
500 : USD 0.1019
3000 : USD 0.0894
6000 : USD 0.0848

14418
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5016
10 : USD 0.3465
100 : USD 0.209
1000 : USD 0.165
3000 : USD 0.1342
9000 : USD 0.121
24000 : USD 0.1177
45000 : USD 0.1155

5820
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 498
Multiples : 1
498 : USD 0.2612

5820
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 6000
Multiples : 6000
6000 : USD 0.1596
9000 : USD 0.14
24000 : USD 0.1396

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PBSS4032PT,215 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS4032PT,215 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PBSS4032PT 30 V, 2.4 A PNP low V (BISS) transistor CEsat Rev. 01 18 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low V Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) CEsat small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4032NT. 1.2 Features Low collector-emitter saturation voltage V CEsat Optimized switching time High collector current capability I and I C CM High collector current gain (h ) at high I FE C High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications DC-to-DC conversion Battery-driven devices Power management Charging circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 30 V CEO I collector current - - 2.4 A C I peak collector current single pulse -- 5A CM t 1ms p 1 R collector-emitter I = 2A - 110 165 m CEsat C saturation resistance I = 200 mA B 1 Pulse test: t 300 s 0.02. p

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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