PBSS5230T 30 V, 2 A PNP low VCEsat (BISS) transistor Rev. 2 4 June 2012 Product data sheet 1. Product profile 1.1 General description PNP low V Breakthrough In Small Signal (BISS) transistor in a SOT23 small CEsat Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4230T. 1.2 Features and benefits Low collector-emiter saturation voltage Higher efficiency leading to less heat V generation CEsat High collector current capability: AEC-Q101 qualified I and I C CM 1.3 Applications DC-to-DC conversion Driver in low supply voltage applications (e.g. lamps and LEDs) Supply line switching Inductive load driver (e.g. relays, Battery charger buzzers and motors) LCD backlighting 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit collector-emitter open base - - -30 V V CEO voltage I collector current - - -2 A C I peak collector current single pulse t 1ms ---3 A CM p R collector-emitter I =-500mA I = -50 mA pulsed - 160 220 CEsat C B saturation resistance t 300 s 0.02 T =25C p amb SOT23PBSS5230T NXP Semiconductors 30 V, 2 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base 3 3 2E emitter 3 C collector 1 12 2 SOT23 (TO-236AB) sym013 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS5230T TO-236AB plastic surface-mounted package 3 leads SOT23 4. Marking Table 4. Marking codes 1 Type number Marking code PBSS5230T %3G 1 % = placeholder for manufacturing site code 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - -30 V CBO V collector-emitter voltage open base - -30 V CEO V emitter-base voltage open collector - -5 V EBO I collector current - -2 A C I peak collector current single pulse t 1ms - -3 A CM p I base current - -300 mA B 1 P total power dissipation T 25 C - 300 mW tot amb 2 - 480 mW T junction temperature - 150 C j T ambient temperature -65 150 C amb T storage temperature -65 150 C stg 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm . PBSS5230T All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 4 June 2012 2 of 10