PBSS5240XF Nexperia

PBSS5240X 40 V, 2 A PNP low VCEsat (BISS) transistor 19 October 2012 Product data sheet 1. Product profile 1.1 General description PNP low V Breakthrough In Small Signal (BISS) transistor in a medium power and CEsat flat lead SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4240X. 1.2 Features and benefits Low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High efficiency due to less heat generation 1.3 Applications DC-to-DC conversion Supply line switching Battery charger LCD backlighting Driver in low supply voltage applications (e.g. lamps and LEDs) Inductive load driver (e.g. relays, buzzers and motors) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - -40 V CEO voltage I collector current - - -2 A C I peak collector current - - -3 A CM R collector-emitter I = -1 A I = -100 mA pulsed - - 310 m CEsat C B saturation resistance t 300 s 0.02 T = 25 C p amb I repetitive peak t 20 ms 0.33 pulsed - - -2.5 A CRM p collector currentNexperia PBSS5240X 40 V, 2 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 E emitter C 2 C collector B 3 B base E 3 2 1 sym132 SOT89 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS5240X SOT89 plastic surface-mounted package die pad for good heat transfer SOT89 3 leads 4. Marking Table 4. Marking codes Type number Marking code PBSS5240X S48 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - -40 V CBO V collector-emitter voltage open base - -40 V CEO V emitter-base voltage open collector - -5 V EBO I collector current - -2 A C I repetitive peak collector current 0.33 t 20 ms pulsed - -2.5 A CRM p I peak collector current - -3 A CM I base current - -300 mA B I peak base current - -1 A BM P total power dissipation 1 - 0.5 W tot 2 - 0.95 W PBSS5240X All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 19 October 2012 2 / 12