X-On Electronics has gained recognition as a prominent supplier of PBSS5260PAPS Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS5260PAPS Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PBSS5260PAPS Nexperia

Name: PBSS5260PAPS
Brand: Nexperia
SKU: PBSS5260PAPS_Nexperia
Availability: OutOfStock
Rating: 5 (11 reviews)

PBSS5260PAPS electronic component of Nexperia

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See Product Specifications

Part No.	PBSS5260PAPS
Manufacturer:	Nexperia
Category:	Bipolar Transistors - BJT
Description:	TRANS, DUAL PNP, AECQ101, -60V, SOT1118D
Datasheet:	PBSS5260PAPS Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

PBSS5260PAPS More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 MOQ : 1 Multiples : 1	1 : USD 0.7938 10 : USD 0.652 100 : USD 0.4871 500 : USD 0.383 1000 : USD 0.2964		N/A

Specifications

Manufacturer Nexperia Nexperia
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Transistor Polarity Dual PNP Dual PNP
Brand Nexperia Nexperia
Collector Emitter Voltage Vbrceo - 60 V - 60 V
Power Dissipation Pd 510 mW 510 mW
Dc Collector Current - 2 A - 2 A
Dc Current Gain Hfe 50hFE 50hFE
Transistor Case Style SOT - 1118 SOT - 1118
No. Of Pins 6Pins 6Pins
Operating Temperature Max 150 C 150 C
Product Range AEC - Q101 Series AEC - Q101 Series
Automotive Qualification Standard AEC - Q101 AEC - Q101
Msl MSL 1 - Unlimited MSL 1 - Unlimited
Svhc No SVHC (15 - Jan - 2018) No SVHC (15 - Jan - 2018)

We are delighted to provide the PBSS5260PAPS from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS5260PAPS and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

PBSS5260PAPS 60 V, 2 A PNP/PNP low VCEsat (BISS) double transistor 15 December 2015 Product data sheet 1. General description PNP/PNP low V Breakthrough In Small Signal (BISS) double transistor in a leadless CEsat medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN/NPN complement: PBSS4260PANS 2. Features and benefits Very low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High collector current gain h at high I FE C Reduced Printed-Circuit Board (PCB) requirements Exposed heat sink for excellent thermal and electrical conductivity High energy efficiency due to less heat generation Suitable for Automatic Optical Inspection (AOI) of solder joints AEC-Q101 qualified 3. Applications Load switch Battery-driven devices Power management Charging circuits LED lighting Power switches (e.g. motors, fans) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V collector-emitter open base - - -60 V CEO voltage I collector current - - -2 A C I peak collector current single pulse t 1 ms - - -3 A CM p Scan or click this QR code to view the latest information for this productNXP Semiconductors PBSS5260PAPS 60 V, 2 A PNP/PNP low VCEsat (BISS) double transistor Symbol Parameter Conditions Min Typ Max Unit Per transistor R collector-emitter I = -1 A I = -50 mA pulsed - - 310 m CEsat C B saturation resistance t 300 s 0.02 T = 25 C p amb 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 E1 emitter TR1 6 5 4 C1 B2 E2 2 B1 base TR1 TR2 7 8 3 C2 collector TR2 TR1 4 E2 emitter TR2 E1 B1 C2 1 2 3 5 B2 base TR2 sym138 Transparent top view 6 C1 collector TR1 DFN2020D-6 (SOT1118D) 7 C1 collector TR1 8 C2 collector TR2 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS5260PAPS DFN2020D-6 DFN2020D-6: plastic, thermally enhanced ultra thin and SOT1118D small outline package no leads 6 terminals body 2 x 2 x 0.65 mm 7. Marking Table 4. Marking codes Type number Marking code PBSS5260PAPS 3H PBSS5260PAPS All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2015. All rights reserved Product data sheet 15 December 2015 2 / 17

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

NEXPERIA USA INC
Nexperia USA Inc.

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