X-On Electronics has gained recognition as a prominent supplier of PBSS5360PAS Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS5360PAS Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PBSS5360PAS Nexperia

Name: PBSS5360PAS
Brand: Nexperia
SKU: PBSS5360PAS_Nexperia
Availability: OutOfStock
Rating: 5 (11 reviews)

PBSS5360PAS electronic component of Nexperia

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See Product Specifications

Part No.	PBSS5360PAS
Manufacturer:	Nexperia
Category:	Bipolar Transistors - BJT
Description:	TRANSISTOR, AEC-Q101, BIPOL, PNP, -60V
Datasheet:	PBSS5360PAS Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 0.6113 ea
Line Total: USD 3.06

Availability - 0

MOQ: 5 Multiples: 1
Pack Size: 1

PBSS5360PAS More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Thu. 30 Jan to Wed. 05 Feb MOQ : 5 Multiples : 1	5 : USD 0.6113 10 : USD 0.4621 100 : USD 0.3322 500 : USD 0.2606 1000 : USD 0.2198 5000 : USD 0.2001

Specifications

Manufacturer Nexperia Nexperia
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Transistor Polarity PNP PNP
Brand Nexperia Nexperia
Collector Emitter Voltage Vbrceo - 60 V - 60 V
Transition Frequency Ft 120Mhz 120Mhz
Power Dissipation Pd 600 mW 600 mW
Dc Collector Current - 3 A - 3 A
Dc Current Gain Hfe 80hFE 80hFE
Transistor Case Style SOT - 1061 SOT - 1061
No. Of Pins 3Pins 3Pins
Operating Temperature Max 175 C 175 C
Automotive Qualification Standard AEC - Q101 AEC - Q101
Msl MSL 1 - Unlimited MSL 1 - Unlimited
Svhc No SVHC (15 - Jan - 2018) No SVHC (15 - Jan - 2018)

We are delighted to provide the PBSS5360PAS from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS5360PAS and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

PBSS5360PAS 60 V, 3A PNP low VCEsat (BISS) transistor 12 October 2015 Product data sheet 1. General description PNP low V Breakthrough in a Small Signal (BISS) transistor, encapsulated in an CEsat ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads. NPN complement: PBSS4360PAS 2. Features and benefits Low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High collector current gain (h ) at high I FE C High efficiency due to less heat generation High temperature applications up to 175 C Reduced Printed-Circuit Board (PCB) area requirements Leadless small SMD plastic package with soldarable side pads Exposed heat sink for excellent thermal and electrical conductivity Suitable for Automatic Optical Inspection (AOI) of solder joint AEC-Q101 qualified 3. Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - -60 V CEO voltage I collector current - - -3 A C I peak collector current single pulse t 1 ms - - -6 A CM p R collector-emitter I = -3 A I = -300 mA pulsed - 87 150 m CEsat C B saturation resistance t 300 s 0.02 T = 25 C p amb Scan or click this QR code to view the latest information for this product DFN2020D-3NXP Semiconductors PBSS5360PAS 60 V, 3A PNP low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base 3 3 2 E emitter 1 3 C collector 2 sym013 1 2 Transparent top view DFN2020D-3 (SOT1061D) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS5360PAS DFN2020D-3 DFN2020D-3: plastic thermal enhanced ultra thin small SOT1061D outline package no leads 3 terminals body 2 x 2 x 0.65 mm 7. Marking Table 4. Marking codes Type number Marking code PBSS5360PAS EA PBSS5360PAS All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2015. All rights reserved Product data sheet 12 October 2015 2 / 17

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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