PBSS5360XF Nexperia

PBSS5360X 60 V, 3 A PNP low VCEsat (BISS) transistor 3 July 2017 Product data sheet 1. General description PNP low V Breakthrough in Smal Signal (BISS) transitor in a medium power SOT89 (SC-62) CEsat flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4360X 2. Features and benefits Low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High energy efficiency due to less heat generation AEC-Q101 qualified 3. Applications DC-to-DC conversion Supply line switches Battery charger LCD backlighting Driver in low supply voltage applications (e.g. lamps and LEDs) Inductive load driver (e.g. relays, buzzers and motors) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - -60 V CEO voltage I collector current - - -3 A C I peak collector current single pulse t 1 ms - - -6 A CM p R collector-emitter I = -2 A I = -200 mA T = 25 C 1 - - 225 m CEsat C B amb saturation resistance 1 Pulse test: t 300 s 0.02 pNexperia PBSS5360X 60 V, 3 A PNP low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 E emitter C 2 C collector B 3 B base E 3 2 1 sym132 SOT89 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS5360X SOT89 plastic, surface-mounted package 3 leads 1.5 mm pitch 4.5 SOT89 mm x 2.5 mm x 1.5 mm body 7. Marking Table 4. Marking codes Type number Marking code PBSS5360X S42 PBSS5360X All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 3 July 2017 2 / 12