PBSS5540Z 40 V low VCEsat PNP transistor 20 September 2019 Product data sheet 1. General description PNP low V transistor in a SOT223 plastic package. NPN complement: PBSS4540Z. CEsat 2. Features and benefits Low collector-emitter saturation voltage High current capability Improved device reliability due to reduced heat generation. AEC-Q101 qualified 3. Applications Supply line switching circuits Battery management applications DC/DC converter applications Strobe flash units Heavy duty battery powered equipment (motor and lamp drivers) MOSFET driver applications. 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - -40 V CEO voltage I collector current - - -5 A C I peak collector current single pulse t 1 ms - - -10 A CM p R collector-emitter I = -2 A I = -200 mA t 300 s - 55 80 m CEsat C B p saturation resistance pulsed 0.02 T = 25 C amb 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base 4 C 2 C collector B 3 E emitter E 1 2 3 4 C collector sym132 SC-73 (SOT223)Nexperia PBSS5540Z 40 V low VCEsat PNP transistor 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS5540Z SC-73 plastic surface-mounted package with increased heatsink 4 SOT223 leads 7. Marking Table 4. Marking codes Type number Marking code PBSS5540Z PB5540 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - -40 V CBO V collector-emitter voltage open base - -40 V CEO V emitter-base voltage open collector - -6 V EBO I collector current - -5 A C I peak collector current single pulse t 1 ms - -10 A CM p I peak base current - -2 A BM P total power dissipation T 25 C 1 - 1.35 W tot amb 2 - 2 W T junction temperature - 150 C j T ambient temperature -65 150 C amb T storage temperature -65 150 C stg 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm . 2 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm . 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance from in free air 1 - - 92 K/W th(j-a) junction to ambient 2 - - 62 K/W 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm . 2 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm . PBSS5540Z All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2019. All rights reserved Product data sheet 20 September 2019 2 / 10