DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PBSS5350Z 50 V low V PNP transistor CEsat Product data sheet 2003 May 13 Supersedes data of 2003 Jan 20NXP Semiconductors Product data sheet 50 V low V PNP transistor PBSS5350Z CEsat FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage SYMBOL PARAMETER MAX. UNIT High collector current capability: I and I C CM V collector-emitter voltage 50 V CEO High collector current gain (h ) at high I FE C I collector current (DC) 3 A C Higher efficiency leading to less heat generation I peak collector current 5 A CM Reduced PCB area requirements compared to DPAK. R equivalent on-resistance <150 m CEsat PINNING APPLICATIONS Power management PIN DESCRIPTION DC/DC converters 1 base Supply line switching 2 collector Battery charger 3 emitter 4 collector Linear voltage regulation (LDO). Peripheral drivers Driver in low supply voltage applications, e.g. lamps, LEDs handbook, halfpage 4 Inductive load driver, e.g. relays, buzzers, motors. 2, 4 DESCRIPTION 1 PNP low V transistor in a SOT223 plastic package. CEsat 3 NPN complement: PBSS4350Z. 12 3 Top view MAM288 MARKING TYPE NUMBER MARKING CODE Fig.1 Simplified outline (SOT223) and symbol. PBSS5350Z PB5350 2003 May 13 2