X-On Electronics has gained recognition as a prominent supplier of PDTB113ZT,215 Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. PDTB113ZT,215 Bipolar Transistors - Pre-Biased are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

PDTB113ZT,215 Nexperia

PDTB113ZT,215 electronic component of Nexperia
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Part No.PDTB113ZT,215
Manufacturer: Nexperia
Category: Bipolar Transistors - Pre-Biased
Description: Transistor: PNP; bipolar; BRT; 50V; 500mA; 250mW; SOT23; R1: 1kO
Datasheet: PDTB113ZT,215 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1801 ea
Line Total: USD 0.18 
Availability - 19904
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
19904
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ : 1
Multiples : 1
1 : USD 0.1801
10 : USD 0.1152
100 : USD 0.0492
1000 : USD 0.0447
3000 : USD 0.0403
9000 : USD 0.0346
24000 : USD 0.0257

2269
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ : 20
Multiples : 20
20 : USD 0.0697
100 : USD 0.0626
380 : USD 0.047
1020 : USD 0.0456

17460
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.027

17460
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 15152
Multiples : 1
15152 : USD 0.0328

28965
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 257
Multiples : 1
257 : USD 0.0304
500 : USD 0.0301
1000 : USD 0.0295
3000 : USD 0.0287
6000 : USD 0.028
15000 : USD 0.0272

87300
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 15152
Multiples : 1
15152 : USD 0.0328

   
Manufacturer
Product Category
RoHS - XON
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Configuration
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
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Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
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Maximum Operating Temperature
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We are delighted to provide the PDTB113ZT,215 from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PDTB113ZT,215 and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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PDTB113ZT PNP 500 mA, 50 V resistor-equipped transistor R1 = 1 k, R2 = 10 k 15 January 2021 Product data sheet 1. General description 500 mA PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTD113ZT. 2. Features and benefits 500 mA output current capability Reduces pick and place costs Built-in bias resistors 10 % resistor ratio tolerance Simplifies circuit design Reduces component count AEC-Q101 qualified 3. Applications Digital application in automotive and industrial segments Cost-saving alternative for BC807 series in digital applications Control of IC inputs Switching loads 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - -50 V CEO voltage I output current - - -500 mA O R1 bias resistor 1 T = 25 C 0.7 1 1.3 k amb R2/R1 bias resistor ratio 9 10 11 Nexperia PDTB113ZT PNP 500 mA, 50 V resistor-equipped transistor R1 = 1 k, R2 = 10 k 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 3 1 I input (base) O R1 2 GND ground (emitter) I 3 O output (collector) R2 GND 1 2 aaa-019606 SOT23 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PDTB113ZT SOT23 plastic, surface-mounted package 3 terminals 1.9 mm pitch 2.9 SOT23 mm x 1.3 mm x 1 mm body 7. Marking Table 4. Marking codes Type number Marking code 1 XK% PDTB113ZT 1 % = placeholder for manufacturing site code 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - -50 V CBO V collector-emitter voltage open base - -50 V CEO V emitter-base voltage open collector - -5 V EBO V input voltage positive - 5 V I negative - -10 V I output current - -500 mA O P total power dissipation T 25 C 1 - 250 mW tot amb T junction temperature - 150 C j T ambient temperature -65 150 C amb T storage temperature -65 150 C stg 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. PDTB113ZT All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2021. All rights reserved Product data sheet 15 January 2021 2 / 8

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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