PESD2V0Y1BSFYL Nexperia

PESD2V0Y1BSF Extremely low capacitance bidirectional ESD protection diode 1 March 2021 Product data sheet 1. General description Extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode, part of the TrEOS protection family. This device is housed in a DSN0603-2 (SOD962-2) leadless ultra small Surface-Mounted Device (SMD) package designed to protect one signal line from the damage caused by ESD and other transients. 2. Features and benefits Bidirectional ESD protection of one line Extremely low trigger-voltage V of 4.3 V TLP t1 Extremely low diode capacitance C = 0.69 pF d Extremely low clamping voltage to protect sensitive I/Os Extremely low-inductance protection path to ground ESD protection up to 20 kV according to IEC 61000-4-2 Ultra small SMD package 3. Applications USB 3.2 and Universal Flash Storage (UFS) data lines Cellular handsets and accessories Portable electronics Communication systems Computers and peripherals 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V reverse standoff - - 2 V RWM voltage C diode capacitance f = 1 MHz V = 1 V T = 25 C - 0.69 0.83 pF d R ambNexperia PESD2V0Y1BSF Extremely low capacitance bidirectional ESD protection diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K1 cathode (diode 1) K1 K2 1 2 2 K2 cathode (diode 2) sym045 Transparent top view DSN0603-2 (SOD962-2) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PESD2V0Y1BSF DSN0603-2 silicon, leadless ultra small package 2 terminals 0.4 mm pitch SOD962-2 0.6 mm x 0.3 mm x 0.3 mm body 7. Marking Table 4. Marking codes Type number Marking code C6 PESD2V0Y1BSF 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V reverse standoff voltage - 2 V RWM I rated peak pulse current t = 8/20 s 1 2 - 6 A PPM p T ambient temperature -40 125 C amb T storage temperature -65 150 C stg ESD maximum ratings V electrostatic discharge IEC 61000-4-2 contact discharge 3 -20 20 kV ESD voltage IEC 61000-4-2 air discharge 3 -20 20 kV 1 Device stressed with 8/20 s exponential decay waveform according to IEC 61000-4-5. 2 In positive and negative direction. 3 Device stressed with ten non-repetitive ESD pulses. PESD2V0Y1BSF All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2021. All rights reserved Product data sheet 1 March 2021 2 / 15