PESD3V3U1UT Nexperia

PESDxU1UT series Ultra low capacitance ESD protection diode in SOT23 package Rev. 02 20 August 2009 Product data sheet 1. Product prole 1.1 General description Ultra low capacitance ElectroStatic Discharge (ESD) protection diode in a SOT23 (TO-236AB) small SMD plastic package designed to protect one high-speed data line from the damage caused by ESD and other transients. 1.2 Features n Unidirectional ESD protection of one line n ESD protection > 23 kV n Ultra low diode capacitance: C = 0.6 pF n IEC 61000-4-2 level 4 (ESD) d n Max. peak pulse power: P up to 200 W n IEC 61000-4-5 (surge) PP n Low clamping voltage 1.3 Applications n 10/100/1000 Ethernet n Local Area Network (LAN) equipment n FireWire n Computers and peripherals n Communication systems n High-speed data lines 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V reverse stand-off voltage RWM PESD3V3U1UT - - 3.3 V PESD5V0U1UT - - 5.0 V PESD12VU1UT - - 12 V PESD15VU1UT - - 15 V PESD24VU1UT - - 24 V 1 C diode capacitance f = 1 MHz V =0V - 0.6 1.5 pF d R 1 Measured from pin 1 to 2PESDxU1UT series NXP Semiconductors Ultra low capacitance ESD protection diode in SOT23 package 2. Pinning information Table 2. Pinning Pin Description Simplied outline Symbol 1 cathode ESD protection diode 3 3 2 cathode compensation diode 3 common anode 12 12 006aaa441 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PESD3V3U1UT - plastic surface mounted package 3 leads SOT23 PESD5V0U1UT PESD12VU1UT PESD15VU1UT PESD24VU1UT 4. Marking Table 4. Marking codes 1 Type number Marking code PESD3V3U1UT *AP PESD5V0U1UT *AQ PESD12VU1UT *AR PESD15VU1UT *AS PESD24VU1UT *AT 1 * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PESDXU1UT SER 2 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 20 August 2009 2 of 13