PHPT610035PK Nexperia

PHPT610035PK PNP/PNP matched high power double bipolar transistor 24 October 2014 Product data sheet 1. General description PNP/PNP high power matched double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. Matched version of PHPT610030PK. NPN/NPN complement: PHPT610035NK. 2. Features and benefits Current gain matching 10 % High thermal power dissipation capability Suitable for high temperature applications up to 175 C Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK High energy efficiency due to less heat generation AEC-Q101 qualified 3. Applications Current mirror Motor control Power management Backlighting applications Relay replacement Differential amplifiers 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V collector-emitter open base - - -100 V CEO voltage I collector current - - -3 A C Per transistor R collector-emitter I = -2 A I = -200 mA pulsed - 110 180 m CEsat C B saturation resistance t 300 s 0.02 T = 25 C p amb Scan or click this QR code to view the latest information for this product LFPAK56DNXP Semiconductors PHPT610035PK PNP/PNP matched high power double bipolar transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 8 7 6 5 1 E1 emitter TR1 C1 B2 E2 2 B1 base TR1 TR2 3 E2 emitter TR2 TR1 4 B2 base TR2 E1 B1 C2 5 C2 collector TR2 sym138 6 C2 collector TR2 1 2 3 4 7 C1 collector TR1 LFPAK56D (SOT1205) 8 C1 collector TR1 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PHPT610035PK LFPAK56D Plastic single ended surface mounted package (LFPAK56D) 8 SOT1205 leads PHPT610035PK All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 24 October 2014 2 / 16