PHPT61003NYX Nexperia

PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 10 September 2020 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61003PY 2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK High energy efficiency due to less heat generation AEC-Q101 qualified 3. Applications Power management Loadswitch Linear mode voltage regulator Backlighting applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - 100 V CEO voltage I collector current - - 3 A C I peak collector current single pulse t 1 ms - - 8 A CM p R collector-emitter I = 1 A I = 50 mA t 300 s - 90 150 m CEsat C B p saturation resistance pulsed 0.02 T = 25 C amb I = 3 A I = 300 mA t 300 s - 75 110 m C B p pulsed 0.02 T = 25 C ambNexperia PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 E emitter mb C 2 E emitter B 3 E emitter E 4 B base sym123 mb C collector 1 2 3 4 LFPAK56 Power- SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PHPT61003NY LFPAK56 plastic, single-ended surface-mounted package 4 terminals SOT669 Power-SO8 7. Marking Table 4. Marking codes Type number Marking code PHPT61003NY 1003NAB PHPT61003NY All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2020. All rights reserved Product data sheet 10 September 2020 2 / 14