PHPT610030PK NXP

PHPT610030PK PNP/PNP high power double bipolar transistor 22 October 2014 Product data sheet 1. General description PNP/PNP high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface- Mounted Device (SMD) power plastic package. NPN/NPN complement: PHPT610030NK. NPN/PNP complement: PHPT610030NPK. 2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK High energy efficiency due to less heat generation AEC-Q101 qualified 3. Applications Motor control Power management Load switch Linear mode voltage regulator Backlighting applications Relay replacement 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V collector-emitter open base - - -100 V CEO voltage I collector current - - -3 A C Per transistor R collector-emitter I = -2 A I = -0.2 A pulsed - 110 180 m CEsat C B saturation resistance t 300 s 0.02 T = 25 C p amb Scan or click this QR code to view the latest information for this product LFPAK56DNXP Semiconductors PHPT610030PK PNP/PNP high power double bipolar transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 8 7 6 5 1 E1 emitter TR1 C1 B2 E2 2 B1 base TR1 TR2 3 E2 emitter TR2 TR1 4 B2 base TR2 E1 B1 C2 5 C2 collector TR2 sym138 6 C2 collector TR2 1 2 3 4 7 C1 collector TR1 LFPAK56D (SOT1205) 8 C1 collector TR1 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PHPT610030PK LFPAK56D Plastic single ended surface mounted package (LFPAK56D) 8 SOT1205 leads 7. Marking Table 4. Marking codes Type number Marking code PHPT610030PK 10030PK 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V collector-base voltage open emitter - -100 V CBO V collector-emitter voltage open base - -100 V CEO V emitter-base voltage open collector - -8 V EBO I collector current - -3 A C I peak collector current single pulse t 1 ms - -8 A CM p I base current - -0.5 A B PHPT610030PK All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 22 October 2014 2 / 15