PHPT610035NK Nexperia

PHPT610035NK NPN/NPN high power double bipolar transistor 14 October 2014 Product data sheet 1. General description NPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface- Mounted Device (SMD) power plastic package. Matched version of PHPT610030NK. PNP/PNP complement: PHPT610035PK. NPN/PNP complement: PHPT610035NPK. 2. Features and benefits Current gain matching 5% High thermal power dissipation capability Suitable for high temperature applications up to 175 C Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK High energy efficiency due to less heat generation AEC-Q101 qualified 3. Applications Current mirror Motor control Power management Backlighting applications Relay replacement differential amplifiers 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V collector-emitter open base - - 100 V CEO voltage I collector current - - 3 A C Per transistor R collector-emitter I = 3 A I = 300 mA pulsed - 75 110 m CEsat C B saturation resistance t 300 s 0.02 T = 25 C p amb Scan or click this QR code to view the latest information for this product LFPAK56DNXP Semiconductors PHPT610035NK NPN/NPN high power double bipolar transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 8 7 6 5 1 E1 emitter TR1 C1 B2 E2 2 B1 base TR1 TR2 3 E2 emitter TR2 TR1 4 B2 base TR2 E1 B1 C2 5 C2 collector TR2 sym140 6 C2 collector TR2 1 2 3 4 7 C1 collector TR1 LFPAK56D (SOT1205) 8 C1 collector TR1 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PHPT610035NK LFPAK56D Plastic single ended surface mounted package (LFPAK56D) 8 SOT1205 leads 7. Marking Table 4. Marking codes Type number Marking code PHPT610035NK 10035NK PHPT610035NK All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 14 October 2014 2 / 16