PHPT610030NK Nexperia

PHPT610030NK NPN/NPN high power double bipolar transistor 20 October 2014 Product data sheet 1. General description NPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface- Mounted Device (SMD) power plastic package. PNP/PNP complement: PHPT610030PK. NPN/PNP complement: PHPT610030NPK. 2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK High energy efficiency due to less heat generation AEC-Q101 qualified 3. Applications Motor control Power management Load switch Linear mode voltage regulator Backlighting applications Relay replacement 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V collector-emitter open base - - 100 V CEO voltage I collector current - - 3 A C Per transistor R collector-emitter I = 3 A I = 0.3 A pulsed t 300 s - 75 110 m CEsat C B p saturation resistance 0.02 T = 25 C amb Scan or click this QR code to view the latest information for this product LFPAK56DNXP Semiconductors PHPT610030NK NPN/NPN high power double bipolar transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 8 7 6 5 1 E1 emitter TR1 C1 B2 E2 2 B1 base TR1 TR2 3 E2 emitter TR2 TR1 4 B2 base TR2 E1 B1 C2 5 C2 collector TR2 sym140 6 C2 collector TR2 1 2 3 4 7 C1 collector TR1 LFPAK56D (SOT1205) 8 C1 collector TR1 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PHPT610030NK LFPAK56D Plastic single ended surface mounted package (LFPAK56D) 8 SOT1205 leads 7. Marking Table 4. Marking codes Type number Marking code PHPT610030NK 10030NK 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V collector-base voltage open emitter - 100 V CBO V collector-emitter voltage open base - 100 V CEO V emitter-base voltage open collector - 7 V EBO I collector current - 3 A C I peak collector current single pulse t 1 ms - 8 A CM p I base current - 0.5 A B PHPT610030NK All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 20 October 2014 2 / 15