X-On Electronics has gained recognition as a prominent supplier of PHPT610030NPKX Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PHPT610030NPKX Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PHPT610030NPKX Nexperia

PHPT610030NPKX electronic component of Nexperia
Images are for reference only
See Product Specifications
Part No.PHPT610030NPKX
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: NXP Semiconductors Bipolar Transistors - BJT NPNPNP high power double bipolar trans
Datasheet: PHPT610030NPKX Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1500: USD 0.3178 ea
Line Total: USD 476.7

Availability - 1455
Ship by Wed. 17 Jul to Tue. 23 Jul
MOQ: 1500  Multiples: 1500
Pack Size: 1500
Availability Price Quantity
1455
Ship by Wed. 17 Jul to Tue. 23 Jul
MOQ : 1500
Multiples : 1500
1500 : USD 0.3178
3000 : USD 0.3125
6000 : USD 0.3071
9000 : USD 0.3017
12000 : USD 0.2963

1455
Ship by Wed. 24 Jul to Mon. 29 Jul
MOQ : 1
Multiples : 1
1 : USD 0.7025
10 : USD 0.5778
30 : USD 0.5173
100 : USD 0.4549
500 : USD 0.4182
1500 : USD 0.3999

87991
Ship by Tue. 23 Jul to Thu. 25 Jul
MOQ : 1
Multiples : 1
1 : USD 0.7578
10 : USD 0.6463
100 : USD 0.4657
500 : USD 0.4014
1000 : USD 0.4002
1500 : USD 0.3588
3000 : USD 0.3093
9000 : USD 0.3059
24000 : USD 0.3036

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the PHPT610030NPKX from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PHPT610030NPKX and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PHPT610030NPK NPN/PNP high power double bipolar transistor 10 September 2020 Product data sheet 1. General description NPN/PNP high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. NPN/NPN complement: PHPT610030NK PNP/PNP complement: PHPT610030PK 2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK High energy efficiency due to less heat generation AEC-Q101 qualified 3. Applications Motor control Power management Load switch Linear mode voltage regulator Backlighting applications Relay replacement 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor for the PNP transistor with negative polarity V collector-emitter open base - - 100 V CEO voltage I collector current - - 3 A C TR1 (NPN) R collector-emitter I = 3 A I = 300 mA t 300 s - 75 110 m CEsat C B p saturation resistance pulsed 0.02 T = 25 C amb TR2 (PNP) R collector-emitter I = -2 A I = -200 mA t 300 s - 110 180 m CEsat C B p saturation resistance pulsed 0.02 T = 25 C ambNexperia PHPT610030NPK NPN/PNP high power double bipolar transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 E1 emitter TR1 8 7 6 5 C1 B2 E2 2 B1 base TR1 TR2 3 E2 emitter TR2 TR1 4 B2 base TR2 5 C2 collector TR2 E1 B1 C2 6 C2 collector TR2 sym139 7 C1 collector TR1 1 2 3 4 8 C1 collector TR1 LFPAK56D Dual LFPAK (SOT1205) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PHPT610030NPK LFPAK56D plastic, single ended surface mounted package (LFPAK56D) 8 SOT1205 Dual LFPAK leads 7. Marking Table 4. Marking codes Type number Marking code PHPT610030NPK 1003NPK PHPT610030NPK All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2020. All rights reserved Product data sheet 10 September 2020 2 / 18

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.

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