PMF170XP Nexperia

PMF170XP 20 V, 1 A P-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low R DSon Very fast switching Trench MOSFET technology 3. Applications Relay driver High-speed line driver High-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -20 V DS j V gate-source voltage -12 - 12 V GS I drain current V = -4.5 V T 25 C 1 - - -1 A D GS amb Static characteristics R drain-source on-state V = -4.5 V I = -1 A T = 25 C - 175 200 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm . Scan or click this QR code to view the latest information for this product SOT 323NXP Semiconductors PMF170XP 20 V, 1 A P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate 3 D 2 S source G 3 D drain 1 2 S SC-70 (SOT323) 017aaa094 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMF170XP SC-70 plastic surface-mounted package 3 leads SOT323 7. Marking Table 4. Marking codes Type number Marking code 1 PMF170XP XD% 1 % = placeholder for manufacturing site code 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T = 25 C - -20 V DS j V gate-source voltage -12 12 V GS I drain current V = -4.5 V T 25 C 1 - -1 A D GS amb V = -4.5 V T = 100 C 1 - -0.7 A GS amb I peak drain current T = 25 C single pulse t 10 s - -4 A DM amb p P total power dissipation T = 25 C 2 - 290 mW tot amb 1 - 360 mW T = 25 C - 1670 mW sp T junction temperature -55 150 C j PMF170XP All information provided in this document is subject to legal disclaimers. NXP N.V. 2013. All rights reserved Product data sheet 29 October 2013 2 / 15