PMV16XN Nexperia

PMV16XN 20 V, N-channel Trench MOSFET 11 November 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power dissipation capability of 1200 mW 3. Applications LED driver Power management Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 20 V DS j V gate-source voltage -12 - 12 V GS I drain current V = 4.5 V T = 25 C t 5 s 1 - - 8.6 A D GS amb Static characteristics R drain-source on-state V = 4.5 V I = 6.8 A T = 25 C - 16 20 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad 2 for drain 6 cm . Scan or click this QR code to view the latest information for this product SOT23NXP Semiconductors PMV16XN 20 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 3 D 1 G gate 2 S source G 3 D drain S 017aaa253 1 2 TO-236AB (SOT23) Table 3. Ordering information Type number Package Name Description Version PMV16XN TO-236AB plastic surface-mounted package 3 leads SOT23 6. Marking Table 4. Marking codes Type number Marking code 1 PMV16XN %BZ 1 % = placeholder for manufacturing site code PMV16XN All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 11 November 2014 2 / 15